| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,080 pcs
|
1080 pcs | On Request | 1 | On Request | On Request | 1151+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2SD2675TL is an NPN bipolar junction transistor manufactured by ROHM Semiconductor. It is designed for general-purpose switching and amplification applications.
Key electrical specifications include a collector-emitter breakdown voltage (Vceo) of 30V, a continuous collector current (Ic) rating of 1A, and a power dissipation (Pd) of 500mW. The transistor offers a minimum DC current gain (hFE) of 270 at Ic=100mA and Vce=2V, with a maximum Vce saturation voltage of 350mV at Ib=25mA and Ic=500mA. The transition frequency (ft) is 320MHz.
The device is housed in a surface-mount SC-96 package with a TSMT3 supplier device package designation. It is rated for a maximum junction temperature of 150°C.
| Qty | Low | High |
|---|---|---|
| 3,000+ | $0.19 | $0.19 |
| 6,000+ | $0.18 | $0.18 |
| 9,000+ | $0.18 | $0.18 |
| 24,000+ | $0.16 | $0.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage (Vceo) is 30V.
The maximum continuous collector current (Ic) is 1A.
The 2SD2675TL is supplied in a surface-mount SC-96 package with TSMT3 supplier device package.
The maximum junction temperature (TJ) is 150°C.
The part is listed as RoHS3 Compliant, but this is unverified from official documentation.
The transition frequency (ft) is 320 MHz.
The minimum DC current gain (hFE) is 270 at Ic=100mA and Vce=2V.