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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,062 pcs
|
2062 pcs | On Request | 1 | On Request | On Request | 04+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector-Base Cutoff Current (ICBO) | |
| Collector-Base Voltage (VCBO) | |
| Collector-Emitter Cutoff Current (ICEO) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Voltage (VEBO) | |
| Frequency | |
| Mounting Type | |
| Noise Voltage (NV) | |
| Operating Temperature | |
| Peak Collector Current (ICP) | |
| Power | |
| Storage Temperature Range | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2SD2620J0L is a silicon NPN epitaxial planar transistor designed for low-frequency driver amplification. It offers a maximum collector-base voltage of 100V, collector-emitter voltage of 100V, and emitter-base voltage of 15V. The device can handle a continuous collector current of 20mA and a peak current of 50mA, with a power dissipation of 125mW. It features a high forward current transfer ratio (hFE) of 400 to 1200 at VCE=10V, IC=2mA, and a low collector-emitter saturation voltage of 0.05 to 0.20V at IC=10mA, IB=1mA. The transition frequency is 200MHz. The transistor is housed in a surface-mount SC-89 (SOT-490) package with the SSMini3-F1 supplier device package. It is RoHS compliant and suitable for applications requiring high gain and low saturation voltage.
100V
SC-89 (SOT-490) surface mount package.
Junction temperature up to 125°C, storage temperature -55 to 125°C.
Yes, it is RoHS compliant.
400 to 1200 at VCE=10V, IC=2mA.
20mA continuous, 50mA peak.
200 MHz.