| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba 2SD2500 is a silicon NPN triple diffused mesa type transistor specifically designed for horizontal deflection output applications in color televisions. It offers a high collector-base voltage (V CBO) of 1500 V and a collector-emitter voltage (V CEO) of 600 V, making it suitable for high-voltage circuits.
Key electrical characteristics include a low saturation voltage (V CE(sat)) of 3 V (Max.) and a high speed fall time (t f) of 0.35 µs (Typ.). The DC current gain (hFE) ranges from 10 to 30 at IC = 1 A and 4 to 8 at IC = 6 A. The transistor operates with a collector current (IC) of up to 10 A DC and a pulse current (ICP) of up to 20 A.
With a collector power dissipation (PC) of 50 W and a junction temperature (Tj) up to 150 °C, the 2SD2500 is built for demanding applications. It has a typical weight of 5.5 g and is housed in a mold resin package. The storage temperature range is -55 to 150 °C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (V CEO) for the 2SD2500 is 600 V.
The typical fall time (t f) for the 2SD2500 is 0.35 µs.
The maximum collector power dissipation (P C) for the 2SD2500 is 50 W.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.