2SD245300L The 2SD245300L is an NPN silicon transistor from Panasonic, designed for high current transfer ratio and power amplification. Key specs: 60V Vceo, 2A Ic, 10W power dissipation, U-G2 surface mount package.
Mfr Part #:

2SD245300L

Available from 1 distributors
Mfr Name: Panasonic Electronic Components
Panasonic Electronic Components
The 2SD245300L is an NPN silicon transistor from Panasonic, designed for high current transfer ratio and power amplification. Key specs: 60V Vceo, 2A Ic, 10W power dissipation, U-G2 surface mount package.
Total Stock: 4,645 pcs

2SD245300L Available from 1 distributor

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2SD245300L Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current (IB)
Collector-Base Voltage (VCBO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage (VEBO)
Frequency
Mounting Type
Operating Temperature
Peak Collector Current (ICP)
Power
Power Dissipation (PC) (Maximum @ Tc=25 °C)
Storage Temperature Range
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2SD245300L Description

Short technical summary and product information.

The 2SD245300L is a silicon NPN triple diffusion planar transistor manufactured by Panasonic Electronic Components. It is designed for high current transfer ratio and power amplification applications.

 

This transistor features a collector-emitter voltage (Vceo) of 60V, collector-base voltage (Vcbo) of 80V, and emitter-base voltage (Vebo) of 6V. The continuous collector current is rated at 2A with a peak collector current of 4A. Base current is limited to 1A. Power dissipation is 10W at case temperature 25°C. The DC current gain (hFE) is a minimum of 500 at Vce=4V and Ic=500mA, with a maximum collector-emitter saturation voltage of 1V at Ib=50mA and Ic=2A. The transition frequency is 50 MHz.

 

The device is housed in a U-G2 package, which is a surface-mount package equivalent to TO-252-3, DPak (2 leads + tab), SC-63. It is designed for surface mount assembly and is RoHS3 compliant.

2SD245300L Quick Information

Product Type: NPN Bipolar Transistor
Series: 2SD2453
Canonical Name: 2SD245300L - NPN Silicon Transistor, 60V Vceo, 2A Ic, U-G2 Package
Subcategory: Single NPN Power Transistor

2SD245300L Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2SD245300L Features

  • High forward current transfer ratio (hFE ≥ 500).
  • Low collector-emitter saturation voltage (1V max).
  • Surface mount U-G2 package (TO-252-3/DPak).
  • RoHS3 compliant.
  • Transition frequency of 50 MHz.

2SD245300L Applications

  • High current gain amplifier circuits.
  • Power output stages.
  • Switching regulator driver circuits.
  • General purpose switching applications.

2SD245300L FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the 2SD245300L?

The maximum collector-emitter voltage (Vceo) is 60V.

What is the package type of the 2SD245300L?

The device is available in a U-G2 surface mount package, equivalent to TO-252-3, DPak (2 leads + tab), SC-63.

What is the operating temperature range of the 2SD245300L?

The junction temperature (Tj) is rated up to 150°C, and the storage temperature range is -55°C to +150°C.

Is the 2SD245300L RoHS compliant?

Yes, the 2SD245300L is RoHS3 compliant as stated in the datasheet.

What is the maximum collector current of the 2SD245300L?

The maximum continuous collector current (Ic) is 2A, with a peak non-repetitive current (Icp) of 4A.

What is the DC current gain (hFE) of the 2SD245300L?

The minimum DC current gain (hFE) is 500 at Vce=4V and Ic=500mA.

What is the power dissipation of the 2SD245300L?

The power dissipation is 10W at case temperature 25°C.

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