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2SD2374AP 2SD2374AP is a silicon NPN triple diffusion planar power transistor from Panasonic. It features 80V collector-emitter voltage, 3A collector current, and TO-220D-A1 full-pack package.
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2SD2374AP

Available from 1 distributors
Mfr Name: Panasonic Electronic Components
Panasonic Electronic Components
2SD2374AP is a silicon NPN triple diffusion planar power transistor from Panasonic. It features 80V collector-emitter voltage, 3A collector current, and TO-220D-A1 full-pack package.
✓ Total Stock: 1,498 pcs

2SD2374AP Available from 1 distributor

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1,498 pcs
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2SD2374AP Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Lead Style
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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2SD2374AP Description

Short technical summary and product information.

The 2SD2374AP is a silicon NPN triple diffusion planar power transistor manufactured by Panasonic Electronic Components. Designed for power amplification, it offers high forward current transfer ratio with good linearity and low collector-emitter saturation voltage. It is complementary to the 2SB1548A PNP transistor.

 

Key electrical specifications include a maximum collector-emitter voltage of 80V, maximum collector current of 3A (5A peak), and a transition frequency of 30 MHz typical. DC current gain (hFE) is specified by rank: Rank Q provides 70 to 150 and Rank P provides 120 to 250 at IC=1A, VCE=4V. At higher current, hFE is at least 10 at IC=3A, VCE=4V. The collector-emitter saturation voltage is limited to 1.2V at IC=3A and IB=0.375A. Base-emitter voltage is max 1.8V.

 

The device is housed in a TO-220-3 Full Pack package (supplier device package TO-220D-A1) with through-hole mounting. The full-pack design allows installation to a heat sink with a single screw. Maximum power dissipation is 25W at a case temperature of 25°C, or 2W without a heat sink. Junction temperature is rated up to 150°C, with a storage temperature range of -55°C to +150°C. The product complies with the RoHS Directive (EU 2002/95/EC).

2SD2374AP Quick Information

Product Type: NPN Power Transistor
Series: 2SD2374A
Canonical Name: Silicon NPN Triple Diffusion Planar Power Transistor
Subcategory: Single BJT

2SD2374AP Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

2SD2374AP Features

  • NPN triple diffusion planar power transistor.
  • Rated for 80V collector-emitter voltage.
  • Supports 3A continuous collector current.
  • Features low collector-emitter saturation voltage.
  • Full-pack TO-220D-A1 package for heatsinks.

2SD2374AP Applications

  • Designed for general purpose power amplification.
  • Pairs with complementary PNP transistor 2SB1548A.
  • Suitable for linear amplification with stable hFE.

2SD2374AP FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the 2SD2374AP?

The maximum collector-emitter voltage (VCEO) is 80V.

What package is the 2SD2374AP available in?

It is available in a TO-220-3 Full Pack package with supplier device package TO-220D-A1, through-hole mounting.

What are the operating and storage temperature ranges?

Junction temperature is rated up to 150°C, and storage temperature range is -55°C to +150°C.

Is the 2SD2374AP RoHS compliant?

Yes, it complies with the RoHS Directive (EU 2002/95/EC) as stated in the datasheet.

What is the DC current gain (hFE) of the 2SD2374AP?

The hFE ranges from 70 to 250 depending on rank: Rank Q is 70-150 and Rank P is 120-250, measured at IC=1A, VCE=4V.

What is the collector-emitter saturation voltage of the 2SD2374AP?

The maximum collector-emitter saturation voltage is 1.2V at IC=3A and IB=0.375A.

What is the power dissipation rating of the 2SD2374AP?

The maximum power dissipation is 25W at case temperature 25°C, or 2W without a heat sink.

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