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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,498 pcs
|
1498 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base-Emitter Voltage (VBE) | |
| Collector-Base Voltage (VCBO) | |
| Collector-Emitter Cutoff Current (ICEO) | |
| Collector-Emitter Cutoff Current (Ices) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Cutoff Current (IEBO) | |
| Emitter-Base Voltage (VEBO) | |
| Fall Time (tf) | |
| Frequency | |
| Lead Pitch | |
| Lead Style | |
| Mounting Type | |
| Number of Leads | |
| Operating Temperature | |
| Peak Collector Current (ICP) | |
| Power | |
| Supplier Device Package | |
| TSTG (Minimum/Maximum) | |
| Transistor Type | |
| Turn-On Time (ton) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| hfe (Minimum @ Ic=3 A, Vce=4 V) | |
| hfe (Minimum/Maximum @ Ic=1 A, Vce=4 V, Rank P) | |
| hfe (Minimum/Maximum @ Ic=1 A, Vce=4 V, Rank Q) | |
| pc (Maximum @ Tc=25 °C) | |
| tstg (Typical @ Ic=1 A, Ib 1=0.1 A, Ib 2=-0.1 A, Vcc=50 V) |
The 2SD2374AP is a silicon NPN triple diffusion planar power transistor manufactured by Panasonic Electronic Components. Designed for power amplification, it offers high forward current transfer ratio with good linearity and low collector-emitter saturation voltage. It is complementary to the 2SB1548A PNP transistor.
Key electrical specifications include a maximum collector-emitter voltage of 80V, maximum collector current of 3A (5A peak), and a transition frequency of 30 MHz typical. DC current gain (hFE) is specified by rank: Rank Q provides 70 to 150 and Rank P provides 120 to 250 at IC=1A, VCE=4V. At higher current, hFE is at least 10 at IC=3A, VCE=4V. The collector-emitter saturation voltage is limited to 1.2V at IC=3A and IB=0.375A. Base-emitter voltage is max 1.8V.
The device is housed in a TO-220-3 Full Pack package (supplier device package TO-220D-A1) with through-hole mounting. The full-pack design allows installation to a heat sink with a single screw. Maximum power dissipation is 25W at a case temperature of 25°C, or 2W without a heat sink. Junction temperature is rated up to 150°C, with a storage temperature range of -55°C to +150°C. The product complies with the RoHS Directive (EU 2002/95/EC).
The maximum collector-emitter voltage (VCEO) is 80V.
It is available in a TO-220-3 Full Pack package with supplier device package TO-220D-A1, through-hole mounting.
Junction temperature is rated up to 150°C, and storage temperature range is -55°C to +150°C.
Yes, it complies with the RoHS Directive (EU 2002/95/EC) as stated in the datasheet.
The hFE ranges from 70 to 250 depending on rank: Rank Q is 70-150 and Rank P is 120-250, measured at IC=1A, VCE=4V.
The maximum collector-emitter saturation voltage is 1.2V at IC=3A and IB=0.375A.
The maximum power dissipation is 25W at case temperature 25°C, or 2W without a heat sink.