| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request |
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The 2SD21850RL is a silicon NPN epitaxial planar transistor manufactured by Panasonic, specifically designed for low-frequency output amplification. It is the complementary type to the 2SB1440. The device offers a low collector-emitter saturation voltage, making it efficient for amplifier stages.
Key electrical ratings include a maximum collector-emitter voltage (Vceo) of 50V, a continuous collector current (Ic) of 3A, and a peak collector current (Icp) of 4A. The DC current gain (hFE) is typically 120 to 340 at 200mA/2V, with a minimum of 80 at 1A/2V. The collector-emitter saturation voltage is typically 0.15V (max 0.30V) at 1A/50mA. The transition frequency (fT) is 120MHz, and the collector output capacitance (Cob) is 20pF typical.
The transistor is housed in a MiniP3-F1 surface mount package (TO-243AA) with three leads: base, collector, and emitter. It is rated for a maximum power dissipation of 1W and a junction temperature of up to 150°C. The storage temperature range is -55°C to +150°C. The device is RoHS3 compliant as per the datasheet.
Typical applications include low-frequency output amplification, driver stages, and general-purpose switching. The surface mount package enables compact design and automated assembly.
The maximum collector-emitter voltage (Vceo) is 50V, and the maximum collector-base voltage (Vcbo) is also 50V.
It is available in a TO-243AA surface mount package, also known as MiniP3-F1.
The junction temperature (Tj) can reach up to 150°C, and the storage temperature range is -55°C to +150°C.
Yes, it is RoHS3 compliant as stated in the datasheet (EU 2002/95/EC).
The maximum continuous collector current is 3A, with a peak collector current of 4A.
At Vce=2V and Ic=200mA, the hFE is typically 120 to 340. At Ic=1A, the minimum hFE is 80.
The typical saturation voltage is 0.15V, with a maximum of 0.30V at Ib=50mA and Ic=1A.