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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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8,000 pcs
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8000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2SD2170T100 is an NPN Darlington transistor manufactured by ROHM Semiconductor. It is designed for general purpose switching and amplification applications requiring high current gain. The Darlington configuration provides a minimum DC current gain (hFE) of 1000 at a collector current of 1A and collector-emitter voltage of 2V.
The transistor is rated for a collector-emitter voltage of 90V and a continuous collector current of 2A. It can dissipate up to 2W of power. The transition frequency is 80 MHz, suitable for moderate speed switching. The maximum collector-emitter saturation voltage is 1.5V at a base current of 1mA and collector current of 1A.
The device is housed in a TO-243AA (MPT3) surface mount package, making it suitable for automated assembly. It can operate at a junction temperature up to 150°C. The product is compliant with RoHS3 and REACH directives, and has a moisture sensitivity level of 1 (unlimited).
The collector-emitter voltage rating is 90V.
It comes in a TO-243AA (MPT3) surface mount package.
The maximum junction temperature is 150°C.
Yes, it is RoHS3 compliant.
The minimum DC current gain (hFE) is 1000 at Ic=1A, Vce=2V.
The continuous collector current rating is 2A.
The transition frequency is 80 MHz.