Mfr Part #:

2SD2153T100W

ROHM Semiconductor 2SD2153T100W is an NPN bipolar transistor rated for 25V and 2A. It offers high DC current gain and low saturation voltage in a compact SOT-89 package.

✓ Total Stock: 780 pcs

$ Price Range: $0.22 - $1.08

2SD2153T100W Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Smaxon Electronics ✓ Non-Authorised Inventory information	780 pcs On Request	780 pcs	On Request	1	On Request	On Request	07+	On Request	On Request

2SD2153T100W Description

Short technical summary and product information.

The ROHM Semiconductor 2SD2153T100W is an NPN bipolar junction transistor designed for low frequency power amplification and general-purpose switching applications. Rated with a maximum collector-emitter voltage of 25V and a collector current of 2A (3A pulsed), it delivers a power dissipation of 2W when mounted on a ceramic board.

This transistor features a high DC current gain (hFE) classified as W rank, ranging from 1200 to 2700, ensuring efficient amplification performance. The collector-emitter saturation voltage is typically 120mV at 1A collector current, minimizing power loss. The transition frequency is 110 MHz, suitable for audio and low-frequency circuits.

The device is housed in a surface-mount SOT-89 package (MPT3) with a standard tape-and-reel quantity of 1000 pieces. The operating junction temperature range is -55°C to +150°C, providing robust thermal performance for various environments.

2SD2153T100W Quick Information

Product Type: Bipolar Junction Transistor (BJT)

Canonical Name: 2SD2153T100W NPN Bipolar Transistor

Subcategory: Single BJT

2SD2153T100W Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

2SD2153T100W Estimated Pricing

Qty	Low	High
1+	$1.08	$1.08
10+	$0.68	$0.68
100+	$0.44	$0.44
500+	$0.34	$0.34
1,000+	$0.31	$0.31
2,000+	$0.27	$0.27
5,000+	$0.24	$0.24
10,000+	$0.23	$0.23
25,000+	$0.22	$0.22

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SD2153T100W Features

NPN transistor, 25V VCEO, 2A IC.
High DC current gain, W rank 1200-2700.
Low saturation voltage 120 mV typical.
Surface mount SOT-89 (MPT3) package.
Transition frequency of 110 MHz.

2SD2153T100W Applications

Low frequency power amplifier circuits.
General purpose switching applications.
Audio amplifier output stages.
Driver stages for larger transistors.

2SD2153T100W FAQs

5 frequently asked questions generated from this part’s specifications.

What is the maximum collector-emitter voltage (VCEO) of the 2SD2153T100W?

The maximum collector-emitter voltage is 25 V.

What is the DC current gain (hFE) range for the W rank?

The DC current gain for the W rank is 1200 to 2700 at Vce=6 V and Ic=0.5 A.

What package is the 2SD2153T100W available in?

It is available in a surface-mount TO-243AA (SOT-89) package, also known as MPT3 by ROHM.

What is the operating temperature range?

The junction temperature maximum is 150°C, and the storage temperature range is -55°C to +150°C.

Is the 2SD2153T100W RoHS compliant?

RoHS compliance is suggested but not verified from the datasheet or manufacturer page.

Category	Transistors - Bipolar (BJT) - Single
Manufacturer Name	ROHM Semiconductor
Current	2 A
DC Current Gain (hFE) (Min) @ Ic, Vce	1200 @ 500 mA, 6 V
Frequency	110 MHz
Mounting Type	Surface Mount
Operating Temperature	150°C
Power	2 W
Storage Temperature	-55°C ~ 150°C
Supplier Device Package	MPT3
Tape & Reel	Yes
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500mV @ 20mA, 1A
Voltage	25 V