Mfr Part #:

2SD2150T100R

NPN silicon bipolar transistor with 20V collector-emitter voltage, 3A continuous collector current, and 500mW power dissipation. Packaged in MPT3 (TO-243AA) surface mount package.

✓ Total Stock: 19,840 pcs

$ Price Range: $0.73 - $1.01

2SD2150T100R Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	19,510 pcs On Request	19510 pcs	On Request	1	On Request	On Request	00+	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	330 pcs On Request	330 pcs	On Request	1	On Request	On Request	05+	On Request	On Request

2SD2150T100R Description

Short technical summary and product information.

The 2SD2150T100R is an NPN silicon bipolar transistor from ROHM Semiconductor designed for low frequency applications. It features a collector-emitter voltage (VCEO) of 20V, a continuous collector current of 3A (5A pulse), and a power dissipation of 500mW (2W when mounted on a ceramic substrate).

The transistor offers a low collector-emitter saturation voltage of typically 0.2V at 2A/0.1A, ensuring efficient switching performance. The DC current gain (hFE) is classified as R (180 to 390) at VCE=2V, IC=0.1A, with a full range of 120 to 560. The transition frequency is 290 MHz, making it suitable for general purpose amplification and switching circuits.

The device is housed in a compact MPT3 surface mount package (TO-243AA / SC-62) with three leads. It complements the PNP transistor 2SB1424, enabling symmetric circuit designs. The junction temperature rating is 150°C, with a storage temperature range of -55 to +150°C.

2SD2150T100R Quick Information

Product Type: Bipolar (BJT) Transistor

Series: 2SD2150

Canonical Name: 2SD2150T100R NPN Silicon Bipolar Transistor

Subcategory: Low Frequency Transistor

2SD2150T100R Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

2SD2150T100R Estimated Pricing

Qty	Low	High
1+	$1.01	$1.01
10+	$0.86	$0.86
100+	$0.73	$0.73

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SD2150T100R Features

Low VCE(sat) typical 0.2V at 2A.
hFE classification R: 180 to 390.
Surface mount MPT3 (TO-243AA) package.
500mW power dissipation (2W mounted).
Complementary PNP 2SB1424 available.

2SD2150T100R Applications

General purpose low frequency switching circuits.
Output stage amplification in audio devices.
Driver circuits for relays and solenoids.
Power management in consumer electronics.

2SD2150T100R FAQs

7 frequently asked questions generated from this part’s specifications.

What is the collector-emitter voltage rating?

The collector-emitter voltage (VCEO) is 20V.

What is the package type?

Surface mount MPT3 package (TO-243AA / SC-62).

What is the operating temperature range?

Junction temperature 150°C; storage temperature -55 to +150°C.

Is the 2SD2150T100R RoHS compliant?

Listed as RoHS3 compliant, but not verified via certificate.

What are the hFE classifications for this transistor?

Classification R: 180-390; classification S: 270-560.

What is the typical VCE(sat) value?

Typical 0.2V at IC/IB = 2A/0.1A; maximum 0.5V.

Is there a complementary PNP transistor?

Yes, the complementary PNP transistor is the 2SB1424 from ROHM.

Category	Transistors - Bipolar (BJT) - Single
Manufacturer Name	ROHM Semiconductor
Current	3 A
DC Current Gain (hFE) (Min) @ Ic, Vce	180 @ 100mA, 2V
Frequency	290 MHz
Junction Temperature	150 °C
Mounting Type	Surface Mount
Operating Temperature	150°C (TJ)
Power	500 mW
Storage Temperature	-55°C ~ 150°C
Supplier Device Package	MPT3
Tape & Reel	Yes
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500mV
Voltage	20 V