2SD2150T100R NPN silicon bipolar transistor with 20V collector-emitter voltage, 3A continuous collector current, and 500mW power dissipation. Packaged in MPT3 (TO-243AA) surface mount package.
Mfr Part #:

2SD2150T100R

Available from 2 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
NPN silicon bipolar transistor with 20V collector-emitter voltage, 3A continuous collector current, and 500mW power dissipation. Packaged in MPT3 (TO-243AA) surface mount package.
Total Stock: 19,840 pcs
$ Price Range: $0.73 - $1.01

2SD2150T100R Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
19,510 pcs
19510 pcs On Request 1 On Request On Request 00+ On Request On Request
Non-Authorised Inventory information
330 pcs
330 pcs On Request 1 On Request On Request 05+ On Request On Request

2SD2150T100R Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Current (Pulse)
Collector Cutoff Current
Collector-Base Breakdown Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
DC Current Gain (hFE) Range
Emitter Cutoff Current
Emitter-Base Breakdown Voltage
Frequency
Junction Temperature
Mounting Type
Operating Temperature
Output Capacitance
Packaging Code
Packaging Type
Power
Power Dissipation (Mounted)
Standard Package Quantity
Storage Temperature
Storage Temperature Range
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Vce Saturation (Typical @ Ic/Ib=2 A/0.1 A)
Voltage
hFE Classification

2SD2150T100R Description

Short technical summary and product information.

The 2SD2150T100R is an NPN silicon bipolar transistor from ROHM Semiconductor designed for low frequency applications. It features a collector-emitter voltage (VCEO) of 20V, a continuous collector current of 3A (5A pulse), and a power dissipation of 500mW (2W when mounted on a ceramic substrate).

 

The transistor offers a low collector-emitter saturation voltage of typically 0.2V at 2A/0.1A, ensuring efficient switching performance. The DC current gain (hFE) is classified as R (180 to 390) at VCE=2V, IC=0.1A, with a full range of 120 to 560. The transition frequency is 290 MHz, making it suitable for general purpose amplification and switching circuits.

 

The device is housed in a compact MPT3 surface mount package (TO-243AA / SC-62) with three leads. It complements the PNP transistor 2SB1424, enabling symmetric circuit designs. The junction temperature rating is 150°C, with a storage temperature range of -55 to +150°C.

2SD2150T100R Quick Information

Product Type: Bipolar (BJT) Transistor
Series: 2SD2150
Canonical Name: 2SD2150T100R NPN Silicon Bipolar Transistor
Subcategory: Low Frequency Transistor

2SD2150T100R Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2SD2150T100R Estimated Pricing

Qty Low High
1+ $1.01 $1.01
10+ $0.86 $0.86
100+ $0.73 $0.73

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SD2150T100R Features

  • Low VCE(sat) typical 0.2V at 2A.
  • hFE classification R: 180 to 390.
  • Surface mount MPT3 (TO-243AA) package.
  • 500mW power dissipation (2W mounted).
  • Complementary PNP 2SB1424 available.

2SD2150T100R Applications

  • General purpose low frequency switching circuits.
  • Output stage amplification in audio devices.
  • Driver circuits for relays and solenoids.
  • Power management in consumer electronics.

2SD2150T100R FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating?

The collector-emitter voltage (VCEO) is 20V.

What is the package type?

Surface mount MPT3 package (TO-243AA / SC-62).

What is the operating temperature range?

Junction temperature 150°C; storage temperature -55 to +150°C.

Is the 2SD2150T100R RoHS compliant?

Listed as RoHS3 compliant, but not verified via certificate.

What are the hFE classifications for this transistor?

Classification R: 180-390; classification S: 270-560.

What is the typical VCE(sat) value?

Typical 0.2V at IC/IB = 2A/0.1A; maximum 0.5V.

Is there a complementary PNP transistor?

Yes, the complementary PNP transistor is the 2SB1424 from ROHM.

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