| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10,000 pcs
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10000 pcs | On Request | 1 | On Request | On Request | 06+ | On Request | On Request |
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| Manufacturer Name | |
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| Tape & Reel |
The ROHM Semiconductor 2SD2118 is an NPN silicon transistor with an epitaxial planar structure. It is designed for applications such as strobe flash circuits, offering a low collector-emitter saturation voltage (VCE(sat)) of 0.25V typical at IC/IB = 4A/0.1A. The transistor exhibits excellent DC current gain characteristics, with a minimum DC current transfer ratio (hFE) of 120 at VCE=2V and IC=0.5A, and a typical value of 390.
Key electrical specifications include a collector-base breakdown voltage (BVCBO) of 50V, a collector-emitter breakdown voltage (BVCEO) of 20V, and an emitter-base breakdown voltage (BVEBO) of 6V. The continuous DC collector current (IC) is rated at 5A, with a pulse capability (ICP) of 10A. The maximum power dissipation (PC) is 10W at Tc=25°C. The junction temperature (Tj) can reach up to 150°C, and storage temperatures range from -55°C to 150°C.
The 2SD2118 is housed in a TO-252 (SC-63) surface-mount package. It is supplied on tape and reel with a standard package quantity of 2500 pieces. This transistor complements the 2SB1412.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.85 | $0.85 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical collector-emitter saturation voltage (VCE(sat)) for the 2SD2118 is 0.25V when the collector current (IC) is 4A and the base current (IB) is 0.1A.
The maximum continuous collector current (IC) for the 2SD2118 is 5A.
The collector-base breakdown voltage (BVCBO) of the 2SD2118 is a minimum of 50V.
The 2SD2118 transistor is available in a TO-252 (SC-63) package.
The standard package quantity for the 2SD2118 is 2500 pieces.