2SD2098T100R NPN bipolar transistor with 20V VCEO and 5A DC collector current. Features low collector-emitter saturation voltage of 0.25V typical.
Mfr Part #:

2SD2098T100R

Available from 2 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
NPN bipolar transistor with 20V VCEO and 5A DC collector current. Features low collector-emitter saturation voltage of 0.25V typical.
Total Stock: 2,138 pcs
$ Price Range: $0.68 - $1.19

2SD2098T100R Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,000 pcs
2000 pcs On Request 1 On Request On Request On Request On Request 2026-04-21 02:16:35
Non-Authorised Inventory information
138 pcs
138 pcs On Request 1 On Request On Request On Request On Request On Request

2SD2098T100R Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Current (Pulse)
Collector-Base Voltage (VCBO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
DC Current Gain (hFE) Range
Emitter-Base Voltage (VEBO)
Frequency
Mounting Type
Operating Temperature
Power
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2SD2098T100R Description

Short technical summary and product information.

The 2SD2098T100R is an NPN silicon bipolar transistor from ROHM Semiconductor, designed for general-purpose switching and amplification applications. It offers a collector-emitter voltage (VCEO) of 20V and a collector current capability of 5A DC (10A pulse). The device features excellent DC current gain characteristics with a minimum hFE of 180 at 500mA and 2V, and a typical gain range of 120-390. A key feature is its low collector-emitter saturation voltage, typically 0.25V at 4A/0.1A, making it suitable for low-loss switching. The transistor is housed in the MPT3 package (SC-62), which is a surface-mount type. It is complementary to the 2SB1386, 2SB1412, and 2SB1326 PNP transistors. The absolute maximum junction temperature is 150°C, and the storage temperature range is -55°C to +150°C. Power dissipation is 2W when mounted on a ceramic board.

2SD2098T100R Quick Information

Product Type: Bipolar Junction Transistor (BJT) - Single
Canonical Name: 2SD2098T100R NPN Bipolar Transistor
Subcategory: Single BJT

2SD2098T100R Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2SD2098T100R Estimated Pricing

Qty Low High
1+ $1.19 $1.19
10+ $0.88 $0.88
100+ $0.87 $0.87
500+ $0.68 $0.68

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SD2098T100R Features

  • Low VCE(sat) of 0.25V typical at 4A.
  • High DC current gain with hFE min 180.
  • Rated for 20V VCEO and 5A collector current.
  • Surface-mount MPT3 (SC-62) package.
  • Complementary PNP transistor available.

2SD2098T100R Applications

  • Ideal for low-loss switching circuits.
  • Used in flash strobe and driver applications.
  • Suitable for high-current amplification stages.

2SD2098T100R FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating?

20V.

What is the package type?

MPT3 (SC-62).

What is the maximum collector current?

5A DC, 10A pulse.

What is the typical DC current gain?

hFE range 120-390, minimum 180 at 500mA/2V.

What is the saturation voltage?

Typically 0.25V, maximum 1V at 4A/0.1A.

What is the complementary PNP transistor?

2SB1386, 2SB1412, 2SB1326.

What is the maximum junction temperature?

150°C.

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