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99 pcs
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99 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SD2025 is a single bipolar junction transistor (BJT) manufactured by ROHM Semiconductor. It is housed in a TO-220-3 package and designed for through-hole mounting.
This transistor offers a collector-emitter voltage rating of 100V and a maximum continuous collector current of 8A. The maximum power dissipation is rated at 30W, and it can operate at temperatures up to 150°C. The collector-emitter saturation voltage is a maximum of 1.5V.
Key electrical characteristics include a collector-emitter voltage of 100V and a current rating of 8A. The device has a maximum power dissipation of 30W and a maximum operating temperature of 150°C. Its TO-220-3 package is suitable for applications requiring robust thermal performance and ease of mounting on PCBs.
The 2SD2025 is suitable for general-purpose amplification and switching applications where its voltage and current ratings are appropriate. Its through-hole mounting makes it easy to integrate into existing circuit designs.
| Qty | Low | High |
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| 1+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage of the 2SD2025 transistor is 100V.
The 2SD2025 has a maximum continuous collector current rating of 8A.
The maximum power dissipation for the 2SD2025 transistor is 30W.
The 2SD2025 can operate at a maximum temperature of 150°C.
The 2SD2025 transistor is supplied in a TO-220-3 package.
The 2SD2025 transistor is designed for through-hole mounting.