| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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45 pcs
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45 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SD2012 is an NPN silicon power transistor manufactured by SavantIC. This component is housed in a TO-220-3 package and is designed for through-hole mounting.
Key electrical specifications include a maximum collector current of 3A, a collector base voltage of 60V, and an emitter base voltage of 7V. The collector emitter saturation voltage is a maximum of 400mV, and it has a gain bandwidth product of 3MHz.
Thermal characteristics include a maximum power dissipation of 25W. The operating temperature range is from -65°C to 150°C. The part is specified as RoHS3 Compliant, with an MSL rating of 1 Unlimited and REACH Unaffected status.
This transistor is suitable for various power switching and amplification applications where its specifications meet the design requirements.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the 2SD2012 is 3A.
The collector base voltage rating for the 2SD2012 is 60V.
The maximum power dissipation for the 2SD2012 is 25W.
The operating temperature range for the 2SD2012 is -65°C to 150°C.
The 2SD2012 transistor is in a TO-220-3 package.