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2SD2012 NPN silicon power transistor designed for general-purpose switching and amplification. Rated for 60V collector-emitter voltage and 3A continuous collector current.
Mfr Part #:

2SD2012

Available from 1 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
NPN silicon power transistor designed for general-purpose switching and amplification. Rated for 60V collector-emitter voltage and 3A continuous collector current.
✓ Total Stock: 5,000 pcs

2SD2012 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
5,000 pcs
On Request
5000 pcs On Request 1 On Request On Request On Request On Request On Request
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2SD2012 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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2SD2012 Description

Short technical summary and product information.

The 2SD2012 is an NPN bipolar junction transistor from STMicroelectronics. It features a collector-emitter breakdown voltage of 60V, a continuous collector current rating of 3A, and a maximum power dissipation of 25W.

 

The transistor provides a DC current gain (hFE) of at least 100 at 500mA collector current and 5V Vce, and a transition frequency of 3 MHz. The saturation voltage is typically 1V at 200mA base current and 2A collector current.

 

The device is packaged in a TO-220F full-pack through-hole package, with an operating junction temperature up to 150°C. It is suitable for general-purpose switching and amplification in electronic circuits.

2SD2012 Quick Information

Product Type: NPN Bipolar Transistor
Canonical Name: 2SD2012 NPN Bipolar Transistor, 60V Vce, 3A Ic, TO-220F
Subcategory: Single

2SD2012 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2SD2012 Features

  • NPN bipolar junction transistor.
  • Rated for 60V collector-emitter voltage.
  • Supports up to 3A collector current.
  • Maximum power dissipation of 25W.
  • TO-220F through-hole package.

2SD2012 Applications

  • Ideal for medium-power switching circuits.
  • Used in general purpose amplification stages.
  • Suitable for motor and relay drivers.
  • Common in power management applications.

2SD2012 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage?

60V

What is the package type?

TO-220-3 Full Pack (TO-220F)

What is the maximum operating junction temperature?

150°C

Is the 2SD2012 RoHS compliant?

Yes, it is RoHS3 compliant.

What is the maximum collector current?

3A

What is the maximum power dissipation?

25W

What is the DC current gain (hFE)?

Minimum 100 at 500mA collector current and 5V Vce.

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