| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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7 pcs
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7 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SD2000 from Panasonic Electronic Components is a Silicon NPN triple diffusion planar type transistor specifically designed for power switching applications. It features high-speed switching and satisfactory linearity of its forward current transfer ratio (hFE).
Key electrical characteristics include a collector-emitter voltage (VCEO) of 60V and a continuous collector current (IC) of 4A. The transistor also boasts a transition frequency (fT) of 80MHz at 12V and 0.2A, along with fast switching times including a turn-on time of 0.3µs, storage time of 1.0µs, and fall time of 0.2µs.
Packaged in a TO-220F-A1 full-pack configuration, the 2SD2000 is suitable for mounting with a single screw to a heat sink. Its absolute maximum ratings include a collector power dissipation (PC) of 35W and a maximum junction temperature (Tj) of 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2SD2000 is 60V.
The continuous collector current (IC) rating for the 2SD2000 is 4A.
The 2SD2000 transistor is supplied in a TO-220F-A1 package.
The transition frequency (fT) of the 2SD2000 is 80MHz.
The maximum junction temperature (Tj) for the 2SD2000 is 150°C.