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18 pcs
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18 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SD1933 from ROHM Semiconductor is a silicon power transistor belonging to the Bipolar Junction Transistor (BJT) family, specifically categorized under single, pre-biased types. This component is manufactured by SavantIC according to the provided manufacturer page data.
Key electrical specifications include a maximum collector current of 4A and a maximum collector-emitter voltage of 80V. It can handle a maximum power dissipation of 30W, making it suitable for applications requiring moderate power handling capabilities. The maximum operating temperature is rated at 150°C, ensuring reliable performance under demanding thermal conditions.
This transistor is designed for use in power switching and amplification circuits. Its specifications suggest suitability for general-purpose power applications where robust performance and specific voltage and current ratings are required. The component's operating temperature range allows for deployment in environments with elevated thermal loads.
While specific packaging details like mounting type and standard quantity are not detailed in the available information, its classification as a power transistor implies it is likely available in through-hole or surface-mount packages suitable for power electronics assembly.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the 2SD1933 transistor is 4A.
The maximum collector-emitter voltage for the 2SD1933 is 80V.
The maximum power dissipation for the 2SD1933 transistor is 30W.
The maximum operating temperature for the 2SD1933 is 150°C.