2SD1918TLQ 2SD1918TLQ is an NPN bipolar junction transistor from ROHM Semiconductor with a collector-emitter voltage rating of 160V and a collector current rating of 1.5A, housed in a CPT3 (TO-252) surface mount package.
Mfr Part #:

2SD1918TLQ

Available from 2 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
2SD1918TLQ is an NPN bipolar junction transistor from ROHM Semiconductor with a collector-emitter voltage rating of 160V and a collector current rating of 1.5A, housed in a CPT3 (TO-252) surface mount package.
Total Stock: 4,979 pcs
$ Price Range: $0.38 - $1.67

2SD1918TLQ Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,500 pcs
2500 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
2,479 pcs
2479 pcs On Request 1 On Request On Request 1706+ On Request On Request

2SD1918TLQ Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base-Emitter Saturation Voltage (V_BE(sat))
Collector Current Pulsed (I_CP)
Collector Cut-off Current (I_CBO)
Collector-Base Voltage (V_CBO)
Collector-Emitter Saturation Voltage (V_CE(sat))
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter Cut-off Current (I_EBO)
Emitter-Base Voltage (V_EBO)
Frequency
Mounting Type
Operating Temperature
Output Capacitance (C_ob)
Power
Reel Diameter
Standard Package Quantity
Storage Temperature Range (T_STG)
Supplier Device Package
Tape & Reel
Tape Width
Taping Code
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2SD1918TLQ Description

Short technical summary and product information.

The 2SD1918TLQ is an NPN middle power transistor designed and manufactured by ROHM Semiconductor. It features a collector-emitter voltage (V_CEO) of 160V and a collector current (I_C) rating of 1.5A (3.0A pulsed). The power dissipation is 10W at a case temperature of 25°C.

 

Electrical characteristics include a DC current gain (hFE) ranging from 120 to 270 at V_CE=5V and I_C=100mA, a transition frequency (f_T) of 80MHz typical, and a low collector output capacitance (C_ob) of 20pF typical. The saturation voltage V_CE(sat) is maximally 1.0V at I_C=1A, I_B=100mA.

 

This part is supplied in the TO-252-3 (DPak) surface mount package, also designated as CPT3 by ROHM. The operating junction temperature range is up to 150°C, and the storage temperature range is -55°C to +150°C. The part is available in tape and reel packaging with a standard reel quantity of 2500 pieces.

 

The 2SD1918TLQ is complementary to the PNP type 2SB1275. The device is suitable for use in power amplifiers and switching regulator applications.

2SD1918TLQ Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: 2SD1918TLQ
Subcategory: Single BJT

2SD1918TLQ Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2SD1918TLQ Estimated Pricing

Qty Low High
1+ $1.67 $1.67
10+ $1.05 $1.05
100+ $0.70 $0.70
500+ $0.55 $0.55
1,000+ $0.50 $0.50
2,500+ $0.45 $0.45
5,000+ $0.42 $0.42
7,500+ $0.40 $0.40
12,500+ $0.38 $0.38
17,500+ $0.38 $0.38

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SD1918TLQ Features

  • NPN bipolar junction transistor design.
  • Rated for 160V collector-emitter voltage.
  • 1.5A continuous collector current.
  • 80 MHz transition frequency (typical).
  • Surface mount TO-252 (CPT3) package.

2SD1918TLQ Applications

  • Suitable for power amplifier stages.
  • Used in switching regulator circuits.

2SD1918TLQ FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage (Vceo) for the 2SD1918TLQ?

The maximum collector-emitter voltage (V_CEO) is 160V.

What is the package type of the 2SD1918TLQ?

The 2SD1918TLQ is available in the TO-252-3 (DPak with 2 leads + tab, SC-63) surface mount package, also designated as CPT3 by ROHM.

What is the operating junction temperature range?

The operating junction temperature (T_j) is 150°C maximum. The storage temperature range is -55°C to +150°C.

What is the DC current gain (hFE) of the 2SD1918TLQ?

The DC current gain (hFE) ranges from 120 to 270 at V_CE=5V and I_C=100mA.

What is the complementary PNP transistor for the 2SD1918TLQ?

The complementary PNP type is the 2SB1275 from ROHM Semiconductor.

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