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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,442 pcs
|
2442 pcs | On Request | 1 | On Request | On Request | 98/ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector Current (Maximum @ Pulse, Pw=20 ms, duty=1/2) | |
| Collector Cutoff Current | |
| Collector-Base Voltage | |
| Collector-Emitter Saturation Voltage (Typical @ Ic=500 mA, Ib=50 mA) | |
| Current | |
| DC Current Gain (Maximum @ Vce=5 V, Ic=100 mA) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter Cutoff Current | |
| Emitter-Base Voltage | |
| Frequency | |
| Lead Spacing | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance | |
| Power | |
| Standard Package Quantity | |
| Storage Temperature | |
| Storage Temperature Range | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2SD1858TV2Q is an NPN epitaxial planar silicon transistor designed for medium power switching and amplification applications. Manufactured by ROHM Semiconductor, this device offers a maximum collector-emitter voltage of 32V and a continuous collector current of 1A (2A pulse).
Key electrical characteristics include a typical collector-emitter saturation voltage of only 0.15V at 500mA, ensuring low power loss in switching circuits. The DC current gain (hFE) is graded as Q class, ranging from 120 to 270, providing consistent performance. With a transition frequency of 150 MHz, it is suitable for moderate-speed switching applications.
The transistor is housed in a compact 3-SIP ATV package with 2.54mm lead spacing, designed for through-hole mounting. It can dissipate up to 1W when mounted on a copper clad PCB with adequate collector land area. The complementary PNP type is 2SB1237.
| Qty | Low | High |
|---|---|---|
| 2,500+ | $0.13 | $0.13 |
| 5,000+ | $0.12 | $0.12 |
| 7,500+ | $0.11 | $0.11 |
| 12,500+ | $0.11 | $0.11 |
| 17,500+ | $0.10 | $0.10 |
| 25,000+ | $0.10 | $0.10 |
| 62,500+ | $0.09 | $0.09 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 32V.
The maximum continuous collector current is 1A, with a pulse rating of 2A (Pw=20ms, duty=1/2).
The transistor is available in a 3-SIP ATV through-hole package with 2.54mm lead spacing.
The maximum junction temperature is 150°C, and the storage temperature range is -55°C to +150°C.
The part is listed as RoHS3 Compliant, but this status is unverified and should be confirmed with the manufacturer.
The hFE is graded as Q class, with a range of 120 to 270 at VCE=3V, IC=100mA.
The complementary PNP transistor is the 2SB1237 from ROHM Semiconductor.