| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
13,485 pcs
|
13485 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
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| Tape & Reel |
The ROHM Semiconductor 2SD1858 is an NPN silicon transistor designed for medium power applications. It offers a collector-emitter voltage (VCEO) of 32V and can handle a continuous collector current (IC) of 1A, with a pulse current capability of up to 2A.
A key feature is its low collector-emitter saturation voltage (VCE(sat)) of 0.15V typical at 500mA collector current and 50mA base current, which contributes to reduced power loss.
The transistor has a DC current transfer ratio (hFE) ranging from 120 to 390 under specified conditions. Its transition frequency (fT) is a minimum of 150MHz at 3V VCE and 100mA IC.
The 2SD1858 is housed in a TV2 package and is supplied in quantities of 2500 pieces per reel. It operates within a junction temperature range of -55°C to +150°C and a storage temperature range of -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2SD1858 is 32V.
The continuous collector current (IC) rating for the 2SD1858 is 1A.
The typical collector-emitter saturation voltage (VCE(sat)) is 0.15V at IC/IB = 500mA / 50mA.
The minimum transition frequency (fT) is 150MHz at VCE=3V, IC=100mA.
The 2SD1858 is supplied in the TV2 package.
The standard package quantity for the 2SD1858 is 2500 pieces.