| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,500 pcs
|
1500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SD1835T-AA is an NPN bipolar junction transistor manufactured by On Semiconductor. It is designed for general-purpose switching and linear applications, offering a collector-emitter voltage (VCEO) of 50V, a continuous collector current (IC) of 2A, and a collector dissipation of 0.75W.
Key electrical characteristics include a low collector-emitter saturation voltage (VCE(sat)) of 0.15V typical and 0.4V maximum at 1A, along with a DC current gain (hFE) of 100 minimum at 100mA and 40 minimum at 1.5A. The transistor features a gain bandwidth product (fT) of 150 MHz and fast switching times: turn-on 60ns, storage 550ns, and fall time 30ns.
The device is housed in a through-hole TO-226-3 (TO-92-3) package with a 3-NP supplier device package designation. It is suitable for voltage regulators, relay drivers, lamp drivers, and other electrical equipment. The junction temperature rating is 150°C, with a storage range of -55°C to +150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.16 | $1.16 |
| 10+ | $0.80 | $0.80 |
| 100+ | $0.51 | $0.51 |
| 500+ | $0.31 | $0.31 |
| 1,000+ | $0.23 | $0.23 |
| 1,500+ | $0.21 | $0.21 |
| 3,000+ | $0.18 | $0.18 |
| 9,000+ | $0.16 | $0.16 |
| 24,000+ | $0.13 | $0.13 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (VCEO) is 50V.
The package is TO-226-3, TO-92-3 (TO-226AA), also referred to as 3-NP supplier device package.
The junction temperature is rated up to 150°C, and the storage temperature range is -55°C to +150°C.
The part is listed as RoHS3 Compliant and Pb Free, but this is unverified and based on existing database entries with low confidence.
The continuous collector current (IC) is 2A, with a pulse rating of 3A.
The hFE is 100 minimum at Vce=2V, Ic=100mA, and 40 minimum at Vce=2V, Ic=1.5A.
The VCE(sat) is 0.15V typical and 0.4V maximum at Ic=1A, Ib=50mA.