| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Termination Style | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2SD1819A0L is an NPN silicon epitaxial planar bipolar transistor from Panasonic Electronic Components, designed for general-purpose amplification applications.
Key electrical ratings include a collector-emitter voltage (Vceo) of 50V, collector current (Ic) of 100mA (200mA peak), and power dissipation of 150mW. The device offers a high DC current gain (hFE) range of 160 to 460 at 2mA, 10V, and a low collector-emitter saturation voltage of 100mV typical at 100mA.
Housed in a compact SC-70 (SOT-323) surface-mount package with SMini3-G1 supplier designation, the transistor supports automated assembly and space-constrained designs. The transition frequency is 150MHz, making it suitable for low-frequency amplification stages.
The collector-emitter voltage (Vceo) is 50V.
The continuous collector current (Ic) is 100mA, with a peak current (Icp) of 200mA.
It is available in an SC-70 (SOT-323) surface-mount package, also designated as SMini3-G1.
The junction temperature (Tj) is rated up to 150°C, and the storage temperature range is -55°C to +150°C.
Yes, it is RoHS3 compliant as verified from the datasheet.
At Ic=2mA, Vce=10V, the hFE ranges from 160 to 460. At Ic=100mA, Vce=2V, the minimum hFE is 90.
The complementary PNP transistor is the 2SB1218A.