2SD1816T-TL-H NPN bipolar junction transistor rated for 100V collector-emitter voltage and 4A collector current. Features low saturation voltage and high gain bandwidth product of 180MHz.
Mfr Part #:

2SD1816T-TL-H

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
NPN bipolar junction transistor rated for 100V collector-emitter voltage and 4A collector current. Features low saturation voltage and high gain bandwidth product of 180MHz.
Total Stock: 4,200 pcs
$ Price Range: $0.54 - $1.93

2SD1816T-TL-H Available from 1 distributor

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2SD1816T-TL-H Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base-to-Emitter Saturation Voltage (VBE(sat))
Collector Current Pulse (ICP)
Collector Cutoff Current (ICBO)
Collector Dissipation Pc (Maximum @ Tc=25 °C)
Collector-to-Base Voltage (VCBO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
DC Current Gain Hfe (Minimum @ Ic=3 A, Vce=5 V)
Emitter Cutoff Current (Iebo)
Emitter-to-Base Voltage (VEBO)
Fall Time (tf)
Frequency
Junction Temperature (TJ)
Mounting Type
Operating Temperature
Output Capacitance (Cob)
Power
Storage Temperature
Storage Temperature (Tstg)
Storage Time (tstg)
Supplier Device Package
Tape & Reel
Transistor Type
Turn-On Time (ton)
Vce Saturation (Max) @ Ib, Ic
Voltage

2SD1816T-TL-H Description

Short technical summary and product information.

The 2SD1816T-TL-H is an NPN bipolar junction transistor manufactured by On Semiconductor (onsemi). It is designed for general-purpose high-current switching applications and offers a compact surface mount package.

 

Key electrical characteristics include a maximum collector-emitter voltage (Vceo) of 100V, a continuous collector current (Ic) rating of 4A, and a pulse current capability of 8A. The transistor exhibits a minimum DC current gain (hFE) of 200 at 500mA and 5V, and a typical gain bandwidth product (fT) of 180MHz. The low collector-emitter saturation voltage (Vce(sat)) of 400mV at 2A ensures efficient switching with minimal power loss.

 

Typical applications include relay drivers, high-speed inverters, DC-DC converters, and other general high-current switching circuits. The fast switching times (typical turn-on 100ns, storage 900ns, fall 50ns) make it suitable for high-frequency operation.

 

The device is housed in a surface-mount TO-252-3 (DPak) package with a TP-FA supplier device package designation. It supports a maximum junction temperature of 150°C and a storage temperature range of -55°C to 150°C.

2SD1816T-TL-H Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: 2SD1816T-TL-H
Subcategory: Single BJT Transistor

2SD1816T-TL-H Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2SD1816T-TL-H Estimated Pricing

Qty Low High
1+ $1.93 $1.93
10+ $1.23 $1.23
100+ $0.83 $0.83
700+ $0.54 $0.54

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SD1816T-TL-H Features

  • NPN bipolar transistor with 100V voltage rating.
  • Continuous collector current up to 4A.
  • Low collector-emitter saturation voltage of 400mV.
  • High DC current gain of 200 at 500mA.
  • Fast switching with 100ns typical turn-on time.

2SD1816T-TL-H Applications

  • Suitable for relay driver circuits.
  • Used in high speed inverter designs.
  • Ideal for DC-DC converter switching.
  • General purpose high current switching.
  • Applicable in automotive electronic modules.

2SD1816T-TL-H FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage (Vceo) of the 2SD1816T-TL-H?

The maximum Vceo is 100V.

What is the maximum continuous collector current?

The maximum continuous collector current (Ic) is 4A, with a pulse current (Icp) of 8A.

What is the DC current gain (hFE) of this transistor?

Minimum hFE is 200 at Ic=500mA, Vce=5V and 40 at Ic=3A, Vce=5V.

What is the collector-emitter saturation voltage?

Maximum Vce(sat) is 400mV at Ib=200mA, Ic=2A.

What is the gain bandwidth product (fT)?

Typical fT is 180MHz at Vce=10V, Ic=500mA.

What package is the 2SD1816T-TL-H available in?

It is available in a surface mount TO-252-3 (DPak with 2 leads and tab) also known as SC-63, with supplier device package TP-FA.

Is the 2SD1816T-TL-H RoHS compliant?

Yes, it is listed as RoHS3 compliant, but this is unverified and of low confidence.

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