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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,900 pcs
|
4900 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base-to-Emitter Saturation Voltage (VBE(sat)) | |
| Collector Current Pulse (ICP) | |
| Collector Dissipation (Maximum @ Tc=25 °C) | |
| Collector-to-Base Voltage (VCBO) | |
| Current | |
| DC Current Gain (Minimum @ Vce=5 V, Ic=3 A) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-to-Base Voltage (VEBO) | |
| Fall Time (tf) | |
| Frequency | |
| Junction Temperature (TJ) | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance (Cob) | |
| Power | |
| Storage Temperature | |
| Storage Temperature (Minimum/Maximum) | |
| Storage Time (tstg) | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Turn-On Time (ton) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2SD1816S-TL-H is an NPN bipolar junction transistor from On Semiconductor designed for high current switching applications. It offers a maximum collector-emitter voltage of 100V and a continuous collector current rating of 4A, with an 8A pulse capability. The device features a low collector-emitter saturation voltage of 400mV at 2A, contributing to efficient switching performance.
With a typical gain bandwidth product of 180MHz and a DC current gain (hFE) of 140 minimum at 500mA, this transistor is suitable for high-speed switching circuits. The device also provides fast switching times with a typical turn-on time of 100ns and fall time of 50ns.
The transistor is housed in a surface mount TO-252-3 (DPak) package with the supplier device package designation TP-FA. It supports a maximum junction temperature of 150°C and has a collector dissipation of 1W at 25°C ambient or 20W at case temperature 25°C. The complementary PNP pair is the 2SB1216.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.57 | $1.57 |
| 10+ | $0.97 | $0.97 |
| 100+ | $0.64 | $0.64 |
| 700+ | $0.50 | $0.50 |
| 1,400+ | $0.43 | $0.43 |
| 2,100+ | $0.36 | $0.36 |
| 4,900+ | $0.33 | $0.33 |
| 9,800+ | $0.32 | $0.32 |
| 24,500+ | $0.29 | $0.29 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vceo) is 100V.
The maximum continuous collector current (Ic) is 4A, with an 8A pulse capability.
It is available in a surface mount TO-252-3 (DPak) package with supplier device package TP-FA.
The maximum junction temperature is 150°C, and the storage temperature range is -55°C to +150°C.
The RoHS status is listed as RoHS3 Compliant, but this information is unverified and has low confidence.
The typical gain bandwidth product (fT) is 180MHz at Vce=10V, Ic=500mA.
The complementary PNP pair is the 2SB1216.