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488 pcs
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488 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor 2SD1816S-TL-E is a single NPN bipolar junction transistor (BJT) suitable for HF low-noise amplifier applications. It features a maximum collector-emitter voltage (VCEO) of 100V and a maximum continuous collector current (IC) of 4A. The device can dissipate up to 20W of power.
With a typical gain bandwidth product (fT) of 130 MHz, this transistor operates across a wide temperature range from -55C to +150C. It is supplied in a Reel package with a height of 2.3mm, and the factory pack quantity is 700 units.
This component is part of the 2Sd1816 series from ON Semiconductor. Its specifications make it suitable for various amplification and switching tasks in electronic circuits where low noise and moderate power handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
4 A
100 V
20 W
130 MHz
-55°C to +150°C
NPN
Single