2SD1815T-E NPN bipolar transistor rated for 100V collector-emitter voltage and 3A collector current. Housed in a through-hole TP (TO-251) package.
Mfr Part #:

2SD1815T-E

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
NPN bipolar transistor rated for 100V collector-emitter voltage and 3A collector current. Housed in a through-hole TP (TO-251) package.
Total Stock: 1,485 pcs
$ Price Range: $0.27 - $0.57

2SD1815T-E Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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1,485 pcs
1485 pcs On Request 1 On Request On Request On Request On Request On Request

2SD1815T-E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base-Emitter Saturation Voltage (VBE(sat)) @ IC=1.5A, IB=0.15A
Collector Current Pulse (ICP)
Collector Cutoff Current (ICBO) @ VCB=100V
Collector Dissipation (Maximum @ Tc=25 °C)
Collector-Base Voltage (VCBO)
Collector-Emitter Voltage (VCEO)
Current
DC Current Gain (Minimum @ Vce=5 V, Ic=2 A)
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter Cutoff Current (IEBO) @ Veb=4V
Emitter-Base Voltage (VEBO)
Frequency
Halogen Free
Lead Style
Mounting Type
Operating Temperature
Output Capacitance (Cob) @ Vcb=10V, f=1MHz
Package Type
Power
Standard Package Quantity
Storage Temperature
Storage Temperature Range (TSTG)
Supplier Device Package
Tape & Reel
Termination Style
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2SD1815T-E Description

Short technical summary and product information.

The 2SD1815T-E is an NPN bipolar junction transistor from On Semiconductor designed for high-current switching applications. It features a maximum collector-emitter voltage of 100V and a continuous collector current rating of 3A (6A pulse). The transistor offers low collector-emitter saturation voltage of 400mV at 1.5A, ensuring efficient switching with minimal power loss. With a DC current gain (hFE) ranging from 140 to 400 at 0.5A, it provides consistent amplification characteristics. The gain-bandwidth product is 180MHz, supporting high-frequency operation. The device is packaged in a TP (TO-251) through-hole package, suitable for automated insertion and manual assembly. It is halogen-free and designed for applications such as relay drivers, high-speed inverters, and DC-DC converters. The maximum collector dissipation is 20W when mounted on a heatsink (Tc=25°C). Junction temperature range is -55 to 150°C.

2SD1815T-E Quick Information

Product Type: NPN Bipolar Transistor
Canonical Name: NPN Bipolar Transistor 100V 3A TP Package
Subcategory: Single NPN

2SD1815T-E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

2SD1815T-E Estimated Pricing

Qty Low High
524+ $0.57 $0.57
1,485+ $0.27 $0.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SD1815T-E Features

  • NPN transistor with 100V VCEO rating.
  • Collector current capability up to 3A.
  • Low saturation voltage of 400mV.
  • High gain-bandwidth product of 180MHz.
  • Halogen-free and RoHS compliant.

2SD1815T-E Applications

  • Suitable for relay driver circuits.
  • Used in high-speed inverter designs.
  • Ideal for DC-DC converter stages.
  • Applicable in general high-current switching.

2SD1815T-E FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the 2SD1815T-E?

100V.

What is the maximum collector current rating?

3A continuous, 6A pulse.

What package is the 2SD1815T-E available in?

TP (TO-251) through-hole package.

What is the operating temperature range?

Junction temperature up to 150°C, storage from -55 to 150°C.

Is the 2SD1815T-E RoHS compliant?

Yes, designated as RoHS3 compliant.

What is the DC current gain (hFE) at 0.5A collector current?

140 to 400 at VCE=5V.

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