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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,000 pcs
|
6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base-to-Emitter Saturation Voltage | |
| Collector Current (Pulse) | |
| Collector Cutoff Current | |
| Collector Dissipation (Tc=25°C) | |
| Collector-to-Base Breakdown Voltage | |
| Collector-to-Base Voltage | |
| Current | |
| DC Current Gain (Minimum @ Vce=5 V, Ic=2 A) | |
| DC Current Gain (Minimum/Maximum @ VCE=5 V, IC=0.5 A) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter Cutoff Current | |
| Emitter-to-Base Voltage | |
| Frequency | |
| Gain Bandwidth Product (Typical @ Vce=10 V, Ic=0.5 A) | |
| Halogen Free | |
| Junction Temperature | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance | |
| Power | |
| SVHC Present | |
| Standard Package Quantity | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Termination Style | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Vce Saturation (Maximum @ IC=1.5 A, IB=0.15 A) | |
| Voltage |
The 2SD1815S-E is an NPN bipolar junction transistor manufactured by onsemi (formerly ON Semiconductor). It is designed for general-purpose high-current switching applications including relay drivers, high-speed inverters, and converters. The device is rated for a maximum collector-emitter voltage of 100V and a maximum collector current of 3A (6A pulse), making it suitable for medium-power switching circuits.
Key electrical characteristics include a DC current gain (hFE) of 140 to 400 at 500mA and 5V, a low collector-emitter saturation voltage of 400mV at 1.5A, and a gain-bandwidth product of 180MHz. The transistor also offers a collector-base voltage rating of 120V and an emitter-base voltage rating of 6V. Maximum power dissipation is 20W at a case temperature of 25°C, with a junction temperature rating of 150°C.
The device is housed in a TO-251-3 (IPak, TO-251AA) package with short leads, designed for through-hole mounting. The supplier device package designation is TP. The package is halogen-free compliant as stated in the datasheet. The standard packing quantity is 500 pieces per bag. This transistor is suitable for applications requiring fast switching and low saturation voltage in a compact through-hole package.
| Qty | Low | High |
|---|---|---|
| 6,000+ | $0.20 | $0.20 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 100V.
The maximum continuous collector current is 3A, with a pulse rating of 6A.
The device is available in a TO-251-3 (IPak, TO-251AA) package with short leads, designed for through-hole mounting. The supplier device package is TP.
The maximum junction temperature is 150°C, and the storage temperature range is -55°C to +150°C.
The device is marked as RoHS3 compliant in the database, but this status is unverified. The datasheet confirms halogen-free compliance.
The DC current gain ranges from 140 to 400 at VCE=5V and IC=0.5A, with a minimum of 40 at IC=2A.
The maximum collector-emitter saturation voltage is 400mV at IC=1.5A and IB=0.15A.