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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,400 pcs
|
1400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base-Emitter Saturation Voltage (Max @ 3A, 60mA) | |
| Collector Current Pulse (ICP) | |
| Collector Cutoff Current (ICBO) Max @ 50V | |
| Collector-Base Breakdown Voltage (V(BR)CBO) (Min) | |
| Collector-Base Voltage (VCBO) | |
| Collector-Emitter Breakdown Voltage (V(BR)CEO) (Min) | |
| Collector-Emitter Saturation Voltage (Typical/Maximum @ Ic=3 A, Ib=60 mA) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| DC Current Gain (hFE) (Minimum @ Ic=3 A, Vce=2 V) | |
| DC Current Gain (hFE) (Minimum/Maximum @ Ic=500 mA, Vce=2 V) | |
| Emitter Cutoff Current (IEBO) (Max) @ 5V | |
| Emitter-Base Breakdown Voltage (V(BR)EBO) (Min) | |
| Emitter-Base Voltage (VEBO) | |
| Fall Time (tf) (Typical) | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance (Cob) (Typical @ 10V, 1MHz) | |
| Power | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Storage Temperature | |
| Storage Temperature Range | |
| Storage Time (tstg) (Typical) | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Turn-On Time (ton) (Typical) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2SD1805F-TL-E is a 20V, 5A NPN single bipolar junction transistor from On Semiconductor. It is designed for low saturation voltage and fast switching, making it suitable for applications such as strobes, voltage regulators, relay drivers, and lamp drivers.
The transistor is housed in a surface mount TO-252-3 (DPak) package with a TP-FA supplier device package. It offers a typical gain-bandwidth product of 120MHz and a DC current gain (hFE) range of 120 to 560 at 500mA, 2V. The maximum collector dissipation is 1W at 25°C ambient or 15W at 25°C case temperature.
This device is Pb-free and has a maximum junction temperature of 150°C. The collector-emitter saturation voltage is typically 220mV (maximum 500mV) at 3A collector current. It also features low collector and emitter cutoff currents of 100nA maximum.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.04 | $2.04 |
| 10+ | $1.30 | $1.30 |
| 100+ | $0.88 | $0.88 |
| 700+ | $0.63 | $0.63 |
| 1,400+ | $0.58 | $0.58 |
| 9,800+ | $0.57 | $0.57 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 20V.
The continuous collector current (IC) is 5A.
The datasheet states it is a Pb-Free device, and the existing database indicates RoHS3 compliance, though this is not verified.
It comes in a TO-252-3 (DPAK) surface mount package with supplier device package TP-FA.
The maximum operating junction temperature is 150°C.
At VCE=2V and IC=500mA, the DC current gain ranges from 120 to 560 across all ranks.
Typical switching times at IC=2A, VCC=10V are: turn-on 30ns, storage time 300ns, fall time 40ns.