2SD1803T-E NPN bipolar transistor, 50V collector-emitter voltage, 5A collector current. Low saturation voltage and high current gain for switching applications.
Mfr Part #:

2SD1803T-E

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
NPN bipolar transistor, 50V collector-emitter voltage, 5A collector current. Low saturation voltage and high current gain for switching applications.
Total Stock: 323 pcs
$ Price Range: $0.36 - $1.75

2SD1803T-E Available from 1 distributor

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Non-Authorised
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323 pcs
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2SD1803T-E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Current Pulse (ICP)
Collector Cutoff Current (ICBO)
Collector-Base Voltage (VCBO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter Cutoff Current (Iebo)
Emitter-Base Voltage (VEBO)
Frequency
Mounting Type
Operating Temperature
Output Capacitance (Cob)
Packaging Type
Power
Standard Package Quantity
Storage Temperature (Tstg)
Supplier Device Package
Tape & Reel
Transistor Type
VCEO (Maximum)
Vce Saturation (Max) @ Ib, Ic
Vce(sat) (Typical/Maximum @ Ic=3 A, Ib=150 mA)
Voltage
hFE (Minimum/Maximum @ Ic=500 mA, Vce=2 V)
hfe (Minimum @ Ic = 4 A, Vce = 2 V)
pc (Maximum @ Tc=25 °C)

2SD1803T-E Description

Short technical summary and product information.

The 2SD1803T-E is an NPN bipolar junction transistor from On Semiconductor designed for high-current switching applications. It features a maximum collector-emitter voltage (Vceo) of 50V and a continuous collector current (Ic) of 5A, with pulse capability up to 8A. The transistor offers low collector-emitter saturation voltage (Vce(sat)) of 220mV typical at 3A/150mA, ensuring efficient operation. DC current gain (hFE) ranges from 70 to 400 at 500mA/2V, providing good linearity. With a gain-bandwidth product (fT) of 180MHz, it supports fast switching speeds. Output capacitance (Cob) is 40pF typical. The device is housed in a through-hole TP package (TO-251-3 / IPak / TO-251AA) and is suitable for relay drivers, high-speed inverters, converters, and general high-current switching circuits. Maximum power dissipation is 1W at 25°C ambient and 20W at case temperature. Operating junction temperature range is up to 150°C, with storage from -55°C to 150°C.

2SD1803T-E Quick Information

Product Type: Bipolar (BJT) Transistor
Canonical Name: 2SD1803T-E NPN Bipolar Transistor, 50V, 5A, TP Package
Subcategory: Single NPN

2SD1803T-E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2SD1803T-E Estimated Pricing

Qty Low High
1+ $1.75 $1.75
10+ $1.08 $1.08
100+ $0.71 $0.71
500+ $0.56 $0.56
1,000+ $0.48 $0.48
2,000+ $0.43 $0.43
6,000+ $0.38 $0.38
10,000+ $0.37 $0.37
26,000+ $0.36 $0.36

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SD1803T-E Features

  • Low collector-emitter saturation voltage (220mV typ).
  • High current gain (hFE 70-400).
  • Fast switching with 180MHz gain-bandwidth product.
  • Rated for 50V collector-emitter voltage.
  • Through-hole TP package for easy mounting.

2SD1803T-E Applications

  • Relay drivers for inductive loads.
  • High-speed inverter circuits.
  • DC-DC converter switching stages.
  • General high-current switching applications.

2SD1803T-E FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage?

50V.

What is the package type?

TO-251-3 (IPak, TO-251AA) through-hole package.

What is the operating junction temperature range?

Maximum junction temperature 150°C, storage temperature -55 to 150°C.

Is this part RoHS compliant?

RoHS3 compliant (unverified).

What is the maximum collector current?

5A continuous, 8A pulse.

What is the power dissipation?

1W at 25°C ambient, 20W at case.

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