2SD1803S-TL-E NPN bipolar transistor rated for 50V collector-emitter voltage and 5A continuous collector current. Suitable for high-current switching applications.
Mfr Part #:

2SD1803S-TL-E

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
NPN bipolar transistor rated for 50V collector-emitter voltage and 5A continuous collector current. Suitable for high-current switching applications.
Total Stock: 2,100 pcs
$ Price Range: $0.24

2SD1803S-TL-E Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,100 pcs
2100 pcs On Request 1 On Request On Request On Request On Request On Request

2SD1803S-TL-E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base-Emitter Saturation Voltage (Vbe Sat)
Collector Current (Pulse)
Collector Cutoff Current (ICBO)
Collector-Base Breakdown Voltage (V(BR)CBO)
Collector-Base Voltage (VCBO)
Collector-Emitter Saturation Voltage (Typical/Maximum @ Ib=150 mA, Ic=3 A)
Current
DC Current Gain (Minimum @ Vce=2 V, Ic=4 A)
DC Current Gain (Minimum/Maximum @ Vce=2 V, Ic=0.5 A)
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter Cutoff Current (Iebo)
Emitter-Base Voltage (VEBO)
Frequency
Halogen Free
Mounting Type
Operating Temperature
Output Capacitance (Cob)
Power
Power Dissipation (@ TC = 25 °C)
Standard Package Quantity
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2SD1803S-TL-E Description

Short technical summary and product information.

The 2SD1803S-TL-E is an NPN bipolar junction transistor from ON Semiconductor, designed for general-purpose high-current switching applications. It features a collector-emitter voltage (VCEO) of 50V and a continuous collector current rating of 5A, with pulse capability up to 8A.

 

Electrical characteristics include a DC current gain (hFE) range of 70 to 400 at Vce=2V, Ic=0.5A, and a low collector-emitter saturation voltage of 400mV maximum at Ib=150mA, Ic=3A. The transistor offers a gain-bandwidth product of 180MHz, making it suitable for high-speed switching circuits.

 

The device is housed in a surface-mount TP-FA package (TO-252-3 / DPAk) with a standard reel packing quantity of 700 pieces. Typical applications include relay drivers, high-speed inverters, converters, and other general high-current switching functions.

2SD1803S-TL-E Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Series: 2SD1803
Canonical Name: ON Semiconductor 2SD1803S-TL-E NPN Bipolar Transistor
Subcategory: Single BJT

2SD1803S-TL-E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

2SD1803S-TL-E Estimated Pricing

Qty Low High
2,100+ $0.24 $0.24

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SD1803S-TL-E Features

  • Rated for 50V collector-emitter voltage.
  • Continuous collector current up to 5A.
  • Low VCE(sat) of 400 mV maximum.
  • High gain bandwidth product of 180 MHz.
  • Surface mount TP-FA (TO-252) package.

2SD1803S-TL-E Applications

  • Ideal for relay driver circuits.
  • Used in high-speed inverters.
  • Suits general high-current switching.

2SD1803S-TL-E FAQs

6 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating?

50V (VCEO).

What package is this transistor available in?

TO-252-3 (DPak, SC-63) also known as TP-FA.

What is the maximum junction temperature?

150°C.

What is the maximum collector current?

5A DC continuous, 8A pulse.

What is the DC current gain (hFE) range?

70 to 400 at Vce=2V, Ic=0.5A, with a minimum of 140 at Ic=500mA, Vce=2V per distributor data.

What is the collector-emitter saturation voltage?

Maximum 400mV at Ib=150mA, Ic=3A; typical 220mV.

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