2SD1803S-H NPN bipolar transistor rated for 50V collector-emitter voltage and 5A collector current. Features low saturation voltage and high current gain.
Mfr Part #:

2SD1803S-H

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
NPN bipolar transistor rated for 50V collector-emitter voltage and 5A collector current. Features low saturation voltage and high current gain.
Total Stock: 58,463 pcs
$ Price Range: $0.27

2SD1803S-H Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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58,463 pcs
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2SD1803S-H Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base-Emitter Saturation Voltage (Vbe Sat)
Collector Current Pulse (ICP)
Collector Cutoff Current (ICBO)
Collector-Base Breakdown Voltage (V(BR)CBO)
Collector-Base Voltage (VCBO)
Collector-Emitter Saturation Voltage (Vce Sat)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter Cutoff Current (Iebo)
Emitter-Base Voltage (VEBO)
Frequency
Halogen Free
Lead Style
Mounting Type
Operating Temperature
Output Capacitance (Cob)
Power
Standard Package Quantity
Storage Temperature
Storage Temperature Range
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
hFE (Minimum @ Vce=-2 V, Ic=4 A)
hfe (Minimum/Maximum @ Vce=2 V, Ic=0.5 A)
pc (Maximum @ Tc=25 °C)

2SD1803S-H Description

Short technical summary and product information.

The 2SD1803S-H is an NPN bipolar junction transistor from On Semiconductor designed for general-purpose switching applications. It offers a maximum collector-emitter voltage of 50V and a continuous collector current of 5A, with a pulse current capability of 8A. The transistor features a low collector-emitter saturation voltage of typically 220mV at 3A, enabling efficient high-current switching.

 

The device provides a DC current gain (hFE) ranging from 70 to 400 at Vce=2V, Ic=0.5A, ensuring good linearity. With a gain-bandwidth product of 180MHz, it is suitable for high-speed switching circuits. The transistor is housed in a TO-251 (TP) through-hole package, which offers compact dimensions and easy mounting on PCBs.

 

Typical applications include relay drivers, high-speed inverters, converters, and other general high-current switching circuits. The device is RoHS compliant and has an MSL rating of 1 (unlimited).

2SD1803S-H Quick Information

Product Type: NPN Bipolar Transistor
Series: 2SD1803
Canonical Name: 2SD1803S-H NPN Bipolar Transistor
Subcategory: Single NPN

2SD1803S-H Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

2SD1803S-H Estimated Pricing

Qty Low High
2,000+ $0.27 $0.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SD1803S-H Features

  • NPN bipolar transistor rated for 50V and 5A.
  • Low collector-emitter saturation voltage of 220mV.
  • High DC current gain range of 70 to 400.
  • Gain-bandwidth product of 180MHz for fast switching.
  • Through-hole TO-251 package for easy mounting.

2SD1803S-H Applications

  • Ideal for relay driver circuits.
  • Used in high-speed inverters and converters.
  • Suitable for general high-current switching applications.

2SD1803S-H FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage of the 2SD1803S-H?

50V.

What package does the 2SD1803S-H come in?

TO-251-3 (TP) through-hole package.

What is the operating temperature range?

Maximum junction temperature is 150°C, storage temperature range is -55°C to +150°C.

Is the 2SD1803S-H RoHS compliant?

Yes, it is listed as RoHS3 compliant (unverified).

What is the maximum collector current?

5A continuous, 8A pulse.

What is the DC current gain?

70 to 400 at Vce=2V, Ic=0.5A.

What is the saturation voltage?

Typical 220mV, maximum 400mV at Ic=3A, Ib=0.15A.

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