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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
18,422 pcs
|
18422 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base-Emitter Saturation Voltage (Vbe(sat)) (Ic=3A, Ib=150mA) | |
| Collector Current Pulse (ICP) | |
| Collector Cutoff Current (Icbo) (Vcb=40V) | |
| Collector-Base Breakdown Voltage (V(br)cbo) (Ic=10μA) | |
| Collector-Base Voltage (VCBO) | |
| Current | |
| DC Current Gain (Minimum @ Ic=4 A, Vce=2 V) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter Cutoff Current (IEBO) @ Veb=4V | |
| Emitter-Base Voltage (VEBO) | |
| Frequency | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance (Cob) @ Vcb=10V, f=1MHz | |
| Power | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Standard Package Quantity | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2SD1803S-E is an NPN bipolar junction transistor manufactured by On Semiconductor (onsemi). It is designed for high-current switching applications, with a maximum collector-emitter voltage of 50V and a maximum collector current of 5A (8A pulse). The device offers a low collector-emitter saturation voltage of 400mV at 3A, enabling efficient operation in switching circuits.
Key electrical characteristics include a DC current gain (hFE) of 140 to 400 at 500mA and 2V, a gain-bandwidth product of 180MHz, and an output capacitance of 40pF. The transistor can dissipate up to 20W when the case temperature is held at 25°C, and operates at junction temperatures up to 150°C.
The 2SD1803S-E is housed in a TO-251-3 (IPak, TO-251AA) package with short leads, suitable for through-hole mounting. This package is compact and slim, making it suitable for space-constrained designs. The device is intended for relay drivers, high-speed inverters, converters, and other general high-current switching applications.
With its high current capability and fast switching speed, the 2SD1803S-E is a practical choice for power management and switching circuits where efficiency and reliability are important. The through-hole package simplifies prototyping and manual assembly in many industrial and consumer applications.
| Qty | Low | High |
|---|---|---|
| 1,422+ | $0.29 | $0.29 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 50V.
The maximum collector current (IC) is 5A, with a pulse current rating of 8A.
The power dissipation is 1W at an ambient temperature of 25°C and 20W at a case temperature of 25°C.
The 2SD1803S-E is available in a TO-251-3 (IPak, TO-251AA) through-hole package.
The maximum junction temperature is 150°C, and the storage temperature range is -55°C to 150°C.
The RoHS status is listed as RoHS3 compliant, but this is unverified and should be confirmed with the manufacturer.