| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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580 pcs
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580 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SD1802S-TL-E is an NPN bipolar junction transistor from On Semiconductor designed for general-purpose switching and amplification. It offers a maximum collector-emitter voltage of 50V and continuous collector current of 3A (6A pulse), making it suitable for medium-power applications.
Key electrical characteristics include a DC current gain (hFE) of 140 minimum at 100mA and 2V, and a low collector-emitter saturation voltage of 0.5V maximum at 2A. The transistor features a gain bandwidth product of 150MHz and output capacitance of 25pF, enabling efficient switching performance with typical turn-on time of 70ns and fall time of 35ns.
The device is housed in a TO-252-3 (DPak) surface mount package with a TP-FA supplier device package designation. It supports a junction temperature up to 150°C and power dissipation of 1W at ambient temperature (25°C) or 15W at case temperature (25°C). The transistor is RoHS compliant and Pb-free.
Typical applications include voltage regulators, relay drivers, lamp drivers, and other electrical equipment requiring medium-current switching. The complementary PNP pair is the 2SB1202.
The maximum collector-emitter voltage (VCEO) is 50V.
Maximum continuous collector current is 3A, with 6A pulse capability.
Yes, it is RoHS3 compliant and Pb-free.
The transistor is available in a TO-252-3 (DPak) surface mount package with TP-FA supplier device package.
Minimum hFE is 140 at VCE=2V, IC=100mA, and 35 at VCE=2V, IC=3A.
Typical gain bandwidth product (fT) is 150MHz at VCE=10V, IC=50mA.
Typical turn-on time is 70ns, storage time 650ns, and fall time 35ns.