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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,666 pcs
|
3666 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base-Emitter Saturation Voltage (Vbe Sat) | |
| Collector Current Pulse (ICP) | |
| Collector-Base Breakdown Voltage (V(BR)CBO) | |
| Collector-Base Voltage (VCBO) | |
| Collector-Emitter Breakdown Voltage (V(BR)CEO) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Breakdown Voltage (V(BR)EBO) | |
| Emitter-Base Voltage (VEBO) | |
| Fall Time (tf) | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance (Cob) | |
| Power | |
| Supplier Device Package | |
| TSTG (Minimum/Maximum) | |
| Tape & Reel | |
| Transistor Type | |
| Turn-On Time (ton) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| hfe (Minimum @ Vce=2 V, Ic=3 A) | |
| pc (Maximum @ Tc=25 °C) | |
| tstg (Typical @ IC = 1 A, IB 1 = -10 IB 2 = 1 A) |
The 2SD1802S-E is an NPN bipolar junction transistor manufactured by On Semiconductor (onsemi). It is designed for general-purpose switching and amplification applications. The device features a maximum collector-emitter voltage (VCEO) of 50V and a maximum collector current (IC) of 3A, with a pulse current rating of 6A. It offers a typical DC current gain (hFE) of 140 to 280 at VCE = 2V and IC = 100mA, and a minimum gain of 35 at IC = 3A. The transistor has a typical gain-bandwidth product (fT) of 150 MHz, making it suitable for moderate-speed switching circuits.
The 2SD1802S-E is housed in a TO-251-3 (IPak/TP) through-hole package, which provides a compact footprint for automated assembly. It is rated for a maximum junction temperature of 150°C and can dissipate up to 1W at an ambient temperature of 25°C, or up to 15W when the case temperature is held at 25°C. The device is Pb-Free and RoHS compliant per the datasheet.
| Qty | Low | High |
|---|---|---|
| 3,500+ | $0.16 | $0.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 50V.
The maximum continuous collector current (IC) is 3A, with a pulse current (ICP) rating of 6A.
The 2SD1802S-E is available in a TO-251-3 (IPak/TP) through-hole package.
The maximum junction temperature is 150°C, and the storage temperature range is -55°C to 150°C.
Yes, the datasheet states the device is Pb-Free and RoHS Compliant.
The typical hFE is 140 to 280 at VCE = 2V and IC = 100mA (rank S).
The typical gain-bandwidth product (fT) is 150 MHz at VCE = 10V and IC = 50mA.