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2SD1802S-E 2SD1802S-E is an NPN bipolar junction transistor from On Semiconductor with a maximum collector-emitter voltage of 50V and continuous collector current of 3A.
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2SD1802S-E

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Mfr Name: On Semiconductor
On Semiconductor
2SD1802S-E is an NPN bipolar junction transistor from On Semiconductor with a maximum collector-emitter voltage of 50V and continuous collector current of 3A.
✓ Total Stock: 3,666 pcs
$ Price Range: $0.16

2SD1802S-E Available from 1 distributor

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2SD1802S-E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
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2SD1802S-E Description

Short technical summary and product information.

The 2SD1802S-E is an NPN bipolar junction transistor manufactured by On Semiconductor (onsemi). It is designed for general-purpose switching and amplification applications. The device features a maximum collector-emitter voltage (VCEO) of 50V and a maximum collector current (IC) of 3A, with a pulse current rating of 6A. It offers a typical DC current gain (hFE) of 140 to 280 at VCE = 2V and IC = 100mA, and a minimum gain of 35 at IC = 3A. The transistor has a typical gain-bandwidth product (fT) of 150 MHz, making it suitable for moderate-speed switching circuits.

 

The 2SD1802S-E is housed in a TO-251-3 (IPak/TP) through-hole package, which provides a compact footprint for automated assembly. It is rated for a maximum junction temperature of 150°C and can dissipate up to 1W at an ambient temperature of 25°C, or up to 15W when the case temperature is held at 25°C. The device is Pb-Free and RoHS compliant per the datasheet.

2SD1802S-E Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Canonical Name: 2SD1802S-E NPN Bipolar Transistor
Subcategory: Single NPN

2SD1802S-E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2SD1802S-E Estimated Pricing

Qty Low High
3,500+ $0.16 $0.16

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SD1802S-E Features

  • NPN bipolar junction transistor design.
  • Rated for 50V collector-emitter voltage.
  • Supports 3A continuous collector current.
  • Low VCE(sat) of 0.19V typical at 2A.
  • 150 MHz typical gain-bandwidth product.

2SD1802S-E Applications

  • Used in voltage regulator circuits.
  • Drives relays and solenoids.
  • Switches lamps and LEDs.
  • Suitable for general-purpose amplification.

2SD1802S-E FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage (VCEO) of the 2SD1802S-E?

The maximum collector-emitter voltage (VCEO) is 50V.

What is the maximum collector current rating of the 2SD1802S-E?

The maximum continuous collector current (IC) is 3A, with a pulse current (ICP) rating of 6A.

What package does the 2SD1802S-E come in?

The 2SD1802S-E is available in a TO-251-3 (IPak/TP) through-hole package.

What is the operating temperature range for the 2SD1802S-E?

The maximum junction temperature is 150°C, and the storage temperature range is -55°C to 150°C.

Is the 2SD1802S-E RoHS compliant?

Yes, the datasheet states the device is Pb-Free and RoHS Compliant.

What is the typical DC current gain (hFE) of the 2SD1802S-E?

The typical hFE is 140 to 280 at VCE = 2V and IC = 100mA (rank S).

What is the gain-bandwidth product (fT) of the 2SD1802S-E?

The typical gain-bandwidth product (fT) is 150 MHz at VCE = 10V and IC = 50mA.

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