| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
18,061 pcs
|
18061 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Supplier Device Package | |
| Tape & Reel | |
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| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2SD1801S-E is an NPN bipolar junction transistor manufactured by On Semiconductor. It features a collector-emitter voltage rating of 50V and a maximum collector current of 2A. The device has a power dissipation of 800mW and offers a transition frequency of 150MHz, making it suitable for switching and amplification applications. The DC current gain (hFE) is minimum 140 at 100mA, 2V, and the collector-emitter saturation voltage is 400mV at 50mA base current and 1A collector current. The transistor is housed in a TO-251-3 (IPak) package with through-hole mounting. It operates at a junction temperature up to 150°C. The device is RoHS3 compliant and has an MSL of 1 (unlimited).
| Qty | Low | High |
|---|---|---|
| 3,000+ | $0.19 | $0.19 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
50V
2A
800mW
150MHz
TO-251-3 Short Leads, IPak, TO-251AA (Supplier Device Package: TP)
Maximum 150°C
Yes, RoHS3 Compliant (unverified)