2SD1782KT146Q NPN silicon transistor with 80V Vceo and 500mA collector current. Surface mount package SOT-346 (SMT3) for compact designs.
Mfr Part #:

2SD1782KT146Q

Available from 1 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
NPN silicon transistor with 80V Vceo and 500mA collector current. Surface mount package SOT-346 (SMT3) for compact designs.
Total Stock: 6,012 pcs
$ Price Range: $0.09 - $0.56

2SD1782KT146Q Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
6,012 pcs
6012 pcs On Request 1 On Request On Request 0812+ On Request On Request

2SD1782KT146Q Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector-Base Voltage (VCBO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage (VEBO)
Frequency
Lead Style
Mounting Type
Operating Temperature
Output Capacitance
Power
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
hfe (Minimum/Maximum @ Ic=100 mA, Vce=3 V)
vcesat (Typical/Maximum @ Ib=50 mA, Ic=500 mA)

2SD1782KT146Q Description

Short technical summary and product information.

The 2SD1782KT146Q is an NPN epitaxial silicon transistor manufactured by ROHM Semiconductor. It is designed for general-purpose driver and switching applications.

 

Key electrical specifications include a collector-emitter voltage rating of 80V, collector current capability of 500mA, and power dissipation of 200mW. The DC current gain (hFE) ranges from 120 to 390 at Ic=100mA and Vce=3V. Low collector-emitter saturation voltage of 200mV typical at 500mA/50mA contributes to efficient switching. Transition frequency is 120MHz, and output capacitance is 7.5pF.

 

The device is housed in a surface mount SOT-346 (SMT3) package, compatible with TO-236-3, SC-59, and SOT-23-3 footprints. It is supplied in tape and reel packaging with 3000 units per reel. Operating junction temperature range is up to 150°C.

2SD1782KT146Q Quick Information

Product Type: Single NPN Bipolar Junction Transistor
Canonical Name: 2SD1782KT146Q NPN Transistor
Subcategory: Single NPN

2SD1782KT146Q Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2SD1782KT146Q Estimated Pricing

Qty Low High
1+ $0.56 $0.56
10+ $0.34 $0.34
100+ $0.22 $0.22
500+ $0.16 $0.16
1,000+ $0.15 $0.15
3,000+ $0.12 $0.12
6,000+ $0.11 $0.11
9,000+ $0.10 $0.10
24,000+ $0.09 $0.09

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SD1782KT146Q Features

  • NPN epitaxial silicon transistor.
  • Collector-emitter voltage rating of 80V.
  • Collector current capacity of 500mA.
  • Low saturation voltage of 200mV typical.
  • Surface mount SMT3 package.

2SD1782KT146Q Applications

  • Used in general purpose driver circuits.
  • Suitable for relay and solenoid drivers.
  • Ideal for DC-DC converter switching stages.

2SD1782KT146Q FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of 2SD1782KT146Q?

The VCEO is 80V.

What package is the 2SD1782KT146Q available in?

It is available in SOT-346 (SMT3) surface mount package.

What is the maximum junction temperature?

150°C.

Is the 2SD1782KT146Q RoHS compliant?

RoHS3 compliant status is reported but unverified.

What is the DC current gain (hFE) of this transistor?

hFE ranges from 120 to 390 at Ic=100mA, Vce=3V.

What is the typical collector-emitter saturation voltage?

Typical VCE(sat) is 200mV at Ib=50mA, Ic=500mA.

What is the transition frequency?

120MHz typical at Vce=10V, Ie=-50mA.

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