Ready to onboard?
Are you ready to join DistyParts and
grow your business?
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,825 pcs
|
3825 pcs | On Request | 1 | On Request | On Request | 07+ | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | 14+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Basic Ordering Unit | |
| Collector Current (Pulse) | |
| Collector Cutoff Current | |
| Collector-Base Breakdown Voltage | |
| Collector-Base Voltage | |
| Collector-Emitter Breakdown Voltage | |
| Current | |
| DC Current Gain (Minimum @ VCE=3 V, IC=0.5 A) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter Cutoff Current | |
| Emitter-Base Breakdown Voltage | |
| Emitter-Base Voltage | |
| Frequency | |
| Junction Temperature | |
| Medical Grade | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance | |
| Power | |
| Power Dissipation (Maximum @ Mounted on 40 x 40 x 0.7 mm ceramic board) | |
| Power Dissipation (Maximum @ PCB 1.7 mm thick, collector copper plating 1 cm 2 or larger) | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Taping Code | |
| Terminal Position | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Vce Saturation (Typical @ IC/IB=2 A/0.2 A) | |
| Voltage |
The 2SD1766T100Q is an NPN epitaxial planar silicon transistor from ROHM Semiconductor, designed for medium power switching and amplification applications. It features a maximum collector-emitter voltage of 32V and a continuous collector current of 2A (2.5A pulse).
Electrical characteristics include a minimum DC current gain (hFE) of 120 at 500mA (Vce=3V), low collector-emitter saturation voltage of 0.5V typical (IC/IB=2A/0.2A), and a transition frequency of 100MHz typical. The transistor also exhibits a collector-base breakdown voltage of 40V and emitter-base breakdown voltage of 5V.
The device is housed in a surface mount MPT3 package (TO-243AA) with a base-collector-emitter pinout. Power dissipation is 2W when mounted on a ceramic board, 1W on a standard PCB, and up to 10W at the case (Tc=25°C). The junction temperature range is -55 to +150°C. Complementary PNP types are available (2SB1188, 2SB1182, 2SB1240).
| Qty | Low | High |
|---|---|---|
| 1,000+ | $0.26 | $0.26 |
| 2,000+ | $0.23 | $0.23 |
| 3,000+ | $0.22 | $0.22 |
| 5,000+ | $0.22 | $0.22 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) is 32V.
The maximum continuous collector current is 2A, and 2.5A for a single pulse (PW=20ms).
The minimum hFE is 120 at Ic=500mA, Vce=3V.
The typical VCE(sat) is 0.5V at IC/IB=2A/0.2A.
The typical transition frequency is 100 MHz at VCE=5V, IE=-50mA, f=100MHz.
It is available in a surface mount MPT3 package (TO-243AA).
It is listed as RoHS3 compliant, but this status is unverified and should be confirmed with the manufacturer.