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14 pcs
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14 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ROHM Semiconductor 2SD1762 is an NPN epitaxial planar silicon transistor designed for power applications. It offers a low VCE(sat) of 0.5V typical when operating at an IC/IB ratio of 2A/0.2A. This transistor is rated for a maximum collector-emitter voltage (VCEO) of 50V and a continuous collector current (IC) of 3A.
This component complements the 2SB1184, 2SB1243, and 2SB1185 series transistors. The 2SD1762 is packaged in a 264 case.
Key electrical characteristics and absolute maximum ratings are specified at Ta = 25°C. Further details on packaging specifications and hFE values are available, with hFE values classified into different groups.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical VCE(sat) for the 2SD1762 transistor is 0.5V at an IC/IB of 2A/0.2A.
The maximum collector-emitter voltage (VCEO) for the 2SD1762 is 50V.
The maximum continuous collector current (IC) for the 2SD1762 is 3A.
The 2SD1762 is an NPN silicon epitaxial planar power transistor.
The 2SD1762 is supplied in a 264 package.