2SD1760TLQ NPN silicon power transistor rated for 50V collector-emitter voltage and 3A continuous collector current. Housed in a surface-mount CPT3 (TO-252) package.
Mfr Part #:

2SD1760TLQ

Available from 2 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
NPN silicon power transistor rated for 50V collector-emitter voltage and 3A continuous collector current. Housed in a surface-mount CPT3 (TO-252) package.
Total Stock: 4,241 pcs
$ Price Range: $0.31

2SD1760TLQ Available from 2 distributors

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,250 pcs
2250 pcs On Request 1 On Request On Request 2017 On Request On Request
Non-Authorised Inventory information
1,991 pcs
1991 pcs On Request 1 On Request On Request 03+ On Request On Request

2SD1760TLQ Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Current (Maximum @ PW=100 ms)
Collector Cutoff Current (ICBO)
Collector-Base Breakdown Voltage (BVCBO)
Collector-Base Voltage (VCBO)
Collector-Emitter Breakdown Voltage (BVCEO)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter Cutoff Current (Iebo)
Emitter-Base Breakdown Voltage (BVEBO)
Emitter-Base Voltage (VEBO)
Frequency
Mounting Type
Operating Temperature
Output Capacitance (Cob)
Power
Standard Package Quantity
Storage Temperature
Storage Temperature Range
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2SD1760TLQ Description

Short technical summary and product information.

The 2SD1760TLQ is an NPN epitaxial planar silicon power transistor from ROHM Semiconductor. It is designed for general-purpose switching and amplification applications requiring moderate voltage and current handling.

 

Key electrical ratings include a maximum collector-emitter voltage (VCEO) of 50V, a maximum collector current of 3A DC (4.5A pulse), and a power dissipation of 15W at a case temperature of 25°C. The device features a low collector-emitter saturation voltage (VCE(sat)) of 0.5V typical at 2A/0.2A, contributing to efficient operation. The DC current gain (hFE) for the Q code is specified between 120 and 270 at VCE=3V and IC=0.5A.

 

The transistor is offered in a surface-mount CPT3 package, which is compliant with the TO-252-3 (DPak) and SC-63 standards. It is supplied in tape and reel packaging with a standard quantity of 2500 pieces per reel. The complementary PNP parts are the 2SB1184 and 2SB1243.

2SD1760TLQ Quick Information

Product Type: Bipolar Junction Transistor (BJT)
Series: 2SD1760
Canonical Name: 2SD1760TLQ NPN Silicon Power Transistor
Subcategory: Single Bipolar Junction Transistor

2SD1760TLQ Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2SD1760TLQ Estimated Pricing

Qty Low High
2,500+ $0.31 $0.31

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SD1760TLQ Features

  • NPN epitaxial planar silicon transistor.
  • Rated for 50V collector-emitter voltage.
  • Supports 3A continuous collector current.
  • Low VCE(sat) of 0.5V typical at 2A.
  • Surface-mount CPT3 (TO-252) package.

2SD1760TLQ Applications

  • Suitable for general-purpose switching circuits.
  • Used in power management and regulation.
  • Ideal for driver stages in audio amplifiers.
  • Applicable in DC-DC converter designs.

2SD1760TLQ FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage (VCEO) for the 2SD1760TLQ?

The maximum collector-emitter voltage (VCEO) is 50V.

What is the maximum continuous collector current rating?

The maximum continuous collector current (IC) is 3A.

What package type is the 2SD1760TLQ available in?

It is available in a surface-mount CPT3 package, which is equivalent to TO-252-3 (DPak) and SC-63.

What is the operating junction temperature range?

The maximum junction temperature (Tj) is 150°C, and the storage temperature range is -55°C to 150°C.

What is the DC current gain (hFE) for the Q code variant?

The DC current gain (hFE) for the Q code is 120 to 270, measured at VCE=3V and IC=0.5A.

What is the typical collector-emitter saturation voltage?

The typical collector-emitter saturation voltage (VCE(sat)) is 0.5V at IC/IB = 2A/0.2A.

Is the 2SD1760TLQ RoHS compliant?

The RoHS status is listed as RoHS3 Compliant, but this information is unverified and has low confidence.

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