2SD1758TLQ The 2SD1758TLQ is an NPN silicon transistor from ROHM Semiconductor. It features a 32V collector-emitter voltage, 2A collector current, and a typical DC current gain of 120-270.
Mfr Part #:

2SD1758TLQ

Available from 1 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
The 2SD1758TLQ is an NPN silicon transistor from ROHM Semiconductor. It features a 32V collector-emitter voltage, 2A collector current, and a typical DC current gain of 120-270.
Total Stock: 5,807 pcs
$ Price Range: $0.58 - $1.42

2SD1758TLQ Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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5,807 pcs
5807 pcs On Request 1 On Request On Request 1542+1152+ On Request On Request

2SD1758TLQ Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector Current (Pulse)
Collector Emitter Saturation Voltage (Typical/Maximum @ IC=2 A, IB=0.2 A)
Collector-Base Voltage (VCBO)
Current
DC Current Gain (Minimum/Maximum @ VCE=3 V, IC=500 mA)
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter-Base Voltage (VEBO)
Frequency
Mounting Type
Operating Temperature
Output Capacitance (Cob)
Power
Standard Package Quantity
Storage Temperature
Storage Temperature Range
Supplier Device Package
Tape & Reel
Termination Style
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2SD1758TLQ Description

Short technical summary and product information.

The 2SD1758TLQ is an NPN epitaxial planar silicon transistor designed for medium power switching and amplification applications. It offers a maximum collector-emitter voltage (VCEO) of 32V and a continuous collector current of 2A (2.5A pulse). The device features a low collector-emitter saturation voltage of 0.5V typical (0.8V max) at IC/IB = 2A/0.2A, enabling efficient operation. DC current gain (hFE) is specified in the Q rank range of 120 to 270 at VCE=3V, IC=500mA. Transition frequency is typically 100 MHz, and output capacitance is 30 pF. Power dissipation is rated at 10W at case temperature 25°C. The transistor is housed in a CPT3 surface mount package (TO-252-3, DPak, SC-63) with gull wing leads. It is supplied in tape and reel packaging with 2500 units per reel. Storage temperature range is -55°C to +150°C, and maximum junction temperature is 150°C.

2SD1758TLQ Quick Information

Product Type: NPN Bipolar Transistor
Canonical Name: ROHM Semiconductor 2SD1758TLQ NPN Bipolar Transistor
Subcategory: Single NPN

2SD1758TLQ Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2SD1758TLQ Estimated Pricing

Qty Low High
1+ $1.42 $1.42
10+ $1.21 $1.21
100+ $0.86 $0.86
500+ $0.68 $0.68
1,000+ $0.58 $0.58

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SD1758TLQ Features

  • Low collector-emitter saturation voltage (0.5V typ).
  • High DC current gain range (120-270).
  • Surface mount CPT3 package.
  • 100 MHz transition frequency.
  • 10W power dissipation capability.

2SD1758TLQ Applications

  • Medium power switching circuits.
  • General purpose amplification.
  • Output stage driver applications.
  • Power management in portable devices.

2SD1758TLQ FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage (VCEO) of the 2SD1758TLQ?

The maximum collector-emitter voltage (VCEO) is 32V.

What package does the 2SD1758TLQ come in?

It comes in a CPT3 surface mount package (TO-252-3, DPak, SC-63).

What is the operating junction temperature range?

The maximum junction temperature is 150°C, and the storage temperature range is -55°C to +150°C.

Is the 2SD1758TLQ RoHS compliant?

The RoHS status is listed as RoHS3 compliant, but this is unverified and has low confidence.

What is the DC current gain (hFE) of the 2SD1758TLQ?

The DC current gain (hFE) is 120 to 270 at VCE=3V, IC=500mA (Q rank).

What is the typical collector-emitter saturation voltage?

The typical VCE(sat) is 0.5V at IC=2A, IB=0.2A, with a maximum of 0.8V.

What is the transition frequency of the 2SD1758TLQ?

The typical transition frequency (fT) is 100 MHz at VCE=5V, IE=-50mA.

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