| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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15 pcs
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15 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SD1670 from NEC is a silicon NPN Darlington power transistor. It is specifically designed for industrial applications requiring low-speed, high-current switching.
Key electrical characteristics include a minimum collector-emitter breakdown voltage of 100V and a high DC current gain (hFE) of 1000 minimum at 10A. The transistor also offers a low collector saturation voltage (VCE(sat)) of 1.5V maximum at 10A, which is beneficial for efficient power handling.
This component is suitable for various industrial uses where robust switching capabilities are needed. Its Darlington configuration provides high current gain, simplifying driver circuitry in power applications.
Further details regarding package type, operating temperature range, and specific mounting instructions would typically be found in the manufacturer's datasheet.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum collector-emitter breakdown voltage is 100V.
The minimum DC current gain is 1000 at 10A.
The maximum collector saturation voltage is 1.5V at 10A.
It is designed for low-speed, high-current switching in industrial applications.