2SD1670 The NEC 2SD1670 is an NPN Darlington power transistor designed for low-speed, high-current industrial switching applications. It features a 100V collector-emitter breakdown voltage.
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2SD1670

Available from 1 distributors
Mfr Name: NEC
NEC
The NEC 2SD1670 is an NPN Darlington power transistor designed for low-speed, high-current industrial switching applications. It features a 100V collector-emitter breakdown voltage.
✓ Total Stock: 15 pcs
$ Price Range: $0.99

2SD1670 Available from 1 distributor

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✓ Non-Authorised
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2SD1670 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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2SD1670 Description

Short technical summary and product information.

The 2SD1670 from NEC is a silicon NPN Darlington power transistor. It is specifically designed for industrial applications requiring low-speed, high-current switching.

 

Key electrical characteristics include a minimum collector-emitter breakdown voltage of 100V and a high DC current gain (hFE) of 1000 minimum at 10A. The transistor also offers a low collector saturation voltage (VCE(sat)) of 1.5V maximum at 10A, which is beneficial for efficient power handling.

 

This component is suitable for various industrial uses where robust switching capabilities are needed. Its Darlington configuration provides high current gain, simplifying driver circuitry in power applications.

 

Further details regarding package type, operating temperature range, and specific mounting instructions would typically be found in the manufacturer's datasheet.

2SD1670 Quick Information

Product Type: NPN Darlington Power Transistor
Canonical Name: 2SD1670 NPN Darlington Power Transistor
Subcategory: Bipolar (BJT) - Single, Pre-Biased

2SD1670 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2SD1670 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SD1670 Features

  • Collector-Emitter Breakdown Voltage of 100V.
  • High DC Current Gain of 1000.
  • Low Collector Saturation Voltage of 1.5V.
  • Through Hole Mounting Type.
  • RoHS3 Compliant and MSL 1.

2SD1670 Applications

  • Suitable for low-speed high-current switching.
  • Used in industrial power switching applications.
  • Ideal for high current amplifier circuits.
  • Applicable in power regulation and control systems.

2SD1670 FAQs

4 frequently asked questions generated from this part’s specifications.
What is the collector-emitter breakdown voltage of the 2SD1670?

The minimum collector-emitter breakdown voltage is 100V.

What is the DC current gain (hFE) of the 2SD1670 at 10A?

The minimum DC current gain is 1000 at 10A.

What is the maximum collector saturation voltage for the 2SD1670 at 10A?

The maximum collector saturation voltage is 1.5V at 10A.

What are the primary applications for the 2SD1670 transistor?

It is designed for low-speed, high-current switching in industrial applications.

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