2SD1664T100R NPN silicon transistor rated 32V collector-emitter voltage, 1A collector current with 2W power dissipation. Surface mount in MPT3 (TO-243AA) package.
Mfr Part #:

2SD1664T100R

Available from 3 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
NPN silicon transistor rated 32V collector-emitter voltage, 1A collector current with 2W power dissipation. Surface mount in MPT3 (TO-243AA) package.
Total Stock: 3,672 pcs
$ Price Range: $0.16 - $0.20

2SD1664T100R Available from 3 distributors

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Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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2,202 pcs
2202 pcs On Request 1 On Request On Request 02+ On Request On Request
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1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request
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470 pcs
470 pcs On Request 1 On Request On Request 1337+ On Request On Request

2SD1664T100R Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Termination Style
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2SD1664T100R Description

Short technical summary and product information.

The 2SD1664T100R is a NPN epitaxial planar silicon transistor designed for medium power switching and amplification. It features a collector-emitter voltage (Vceo) of 32V, continuous collector current (Ic) of 1A, and power dissipation (Pd) of 2W. The DC current gain (hFE) is a minimum of 180 at Ic=100mA and Vce=3V, ensuring consistent performance.

 

The transistor offers a low collector-emitter saturation voltage (Vce(sat)) of typically 0.15V and maximum 0.4V at Ic=500mA and Ib=50mA, reducing power loss in switching applications. Its transition frequency (fT) is 150MHz, suitable for low to medium frequency circuits.

 

The device is housed in a surface mount MPT3 package (TO-243AA) and is part of the ROHM Semiconductor medium power transistor series. Complementary PNP types 2SB1132 and 2SB1237 are available for push-pull configurations. The maximum junction temperature is 150°C.

2SD1664T100R Quick Information

Product Type: NPN Bipolar Transistor
Canonical Name: ROHM Semiconductor 2SD1664T100R NPN Silicon Transistor, 32V, 1A, Surface Mount MPT3
Subcategory: Single

2SD1664T100R Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected

2SD1664T100R Estimated Pricing

Qty Low High
1,000+ $0.20 $0.20
2,000+ $0.18 $0.18
3,000+ $0.17 $0.17
5,000+ $0.16 $0.16
7,000+ $0.16 $0.16

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SD1664T100R Features

  • 32V collector-emitter voltage rating.
  • 1A continuous collector current.
  • Low saturation voltage (0.15V typ).
  • Surface mount MPT3 package.
  • Complementary PNP transistors available.

2SD1664T100R Applications

  • General purpose switching circuits.
  • Low voltage amplifier stages.
  • Medium power driver applications.

2SD1664T100R FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating of the 2SD1664T100R?

The collector-emitter voltage (Vceo) is 32V.

What is the package type of the 2SD1664T100R?

The transistor is available in a surface mount MPT3 package, which corresponds to TO-243AA.

What is the maximum operating junction temperature?

The maximum junction temperature is 150°C.

Is the 2SD1664T100R RoHS compliant?

It is listed as RoHS3 compliant, though this is unverified with low confidence.

What is the maximum collector current?

The continuous collector current rating is 1A.

What is the power dissipation of the transistor?

The power dissipation is 2W.

What is the DC current gain (hFE) of the 2SD1664T100R?

The minimum DC current gain is 180 at Ic=100mA and Vce=3V.

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