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2SD1664T100Q 2SD1664T100Q is an NPN silicon transistor from ROHM Semiconductor. It is rated for a maximum collector-emitter voltage of 32V and a maximum collector current of 1A.
Mfr Part #:

2SD1664T100Q

Available from 1 distributors
Mfr Name: ROHM Semiconductor
ROHM Semiconductor
2SD1664T100Q is an NPN silicon transistor from ROHM Semiconductor. It is rated for a maximum collector-emitter voltage of 32V and a maximum collector current of 1A.
Total Stock: 1,866 pcs
$ Price Range: $0.14 - $0.18

2SD1664T100Q Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,866 pcs
1866 pcs On Request 1 On Request On Request 14+ On Request On Request

2SD1664T100Q Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector-Emitter Saturation Voltage (Typical @ Ic=500 mA, Ib=50 mA)
Complementary Pair
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
DC Current Gain (hFE) Classification
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2SD1664T100Q Description

Short technical summary and product information.

The 2SD1664T100Q is an NPN epitaxial planar silicon transistor from ROHM Semiconductor designed for medium power switching and amplification applications. It features a maximum collector-emitter voltage of 32V and a maximum collector current of 1A, with a power dissipation of 2W.

 

This transistor offers a low collector-emitter saturation voltage of 0.15V typical at 500mA collector current, enabling efficient switching with reduced power loss. The DC current gain (hFE) is a minimum of 120 at 100mA collector current, and the transition frequency is 150 MHz typical.

 

The device is housed in a surface-mount TO-243AA package (MPT3 supplier package) and is the complementary NPN type to the PNP transistors 2SB1132 and 2SB1237. The hFE classification for this variant is Q.

2SD1664T100Q Quick Information

Product Type: Bipolar Transistor
Series: 2SD1664
Canonical Name: 2SD1664T100Q NPN Silicon Transistor
Subcategory: Single NPN

2SD1664T100Q Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2SD1664T100Q Estimated Pricing

Qty Low High
1,000+ $0.18 $0.18
2,000+ $0.17 $0.17
3,000+ $0.16 $0.16
5,000+ $0.15 $0.15
7,000+ $0.14 $0.14

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SD1664T100Q Features

  • NPN epitaxial planar silicon transistor.
  • Rated for 32V collector-emitter voltage.
  • Maximum collector current of 1A.
  • Low saturation voltage of 0.15V typical.
  • Surface-mount MPT3 (TO-243AA) package.

2SD1664T100Q Applications

  • Suitable for medium power switching circuits.
  • Used in general purpose amplification stages.
  • Ideal for low voltage power management.

2SD1664T100Q FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the 2SD1664T100Q?

The maximum collector-emitter voltage (Vce) is 32V.

What is the maximum collector current rating?

The maximum collector current (Ic) is 1A.

What is the package type for this transistor?

The package is TO-243AA, with a supplier device package of MPT3.

What is the operating junction temperature range?

The maximum operating junction temperature is 150°C.

What is the DC current gain (hFE) of the 2SD1664T100Q?

The minimum DC current gain (hFE) is 120 at a test condition of Ic=100mA and Vce=3V.

What is the transition frequency of this transistor?

The typical transition frequency is 150 MHz.

Does this transistor have a complementary PNP pair?

Yes, the complementary PNP pair is the 2SB1132 or 2SB1237.

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