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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2SD1620-TD-E is an NPN bipolar junction transistor designed for general-purpose switching and amplification applications. It offers a collector-emitter voltage (Vce) of 10V and a collector current (Ic) rating of 3A, making it suitable for low-to-medium power circuits.
The transistor features a DC current gain (hFE) of minimum 140 at 3A collector current and 2V collector-emitter voltage, with a low saturation voltage of 400mV maximum at 60mA base current and 3A collector current. The transition frequency (fT) is 200MHz, enabling operation in moderate-frequency applications.
This device is housed in a surface-mount TO-243AA package with the supplier device package designation PCP. It is designed for surface-mount assembly and is suitable for automated manufacturing processes. The junction operating temperature is up to 150°C.
Typical applications include switching circuits, driver stages, and signal amplification in consumer electronics, industrial controls, and automotive systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.89 | $0.89 |
| 10+ | $0.55 | $0.55 |
| 100+ | $0.36 | $0.36 |
| 500+ | $0.28 | $0.28 |
| 1,000+ | $0.23 | $0.23 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage (Vce) is 10V.
It is available in a surface-mount TO-243AA package with supplier device package PCP.
The maximum junction temperature is 150°C.
The part is listed as RoHS3 compliant, but this data is unverified.
The collector current (Ic) is 3A.
The transition frequency (fT) is 200MHz.
The minimum hFE is 140 at Ic=3A, Vce=2V.