2SD1620-TD-E NPN bipolar transistor with 10V collector-emitter voltage and 3A collector current. Features 200MHz transition frequency and 500mW power dissipation.
Mfr Part #:

2SD1620-TD-E

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
NPN bipolar transistor with 10V collector-emitter voltage and 3A collector current. Features 200MHz transition frequency and 500mW power dissipation.
Total Stock: 3,000 pcs
$ Price Range: $0.23 - $0.89

2SD1620-TD-E Available from 1 distributor

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Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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3,000 pcs
3000 pcs On Request 1 On Request On Request On Request On Request On Request

2SD1620-TD-E Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Mounting Type
Operating Temperature
Power
Supplier Device Package
Tape & Reel
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

2SD1620-TD-E Description

Short technical summary and product information.

The 2SD1620-TD-E is an NPN bipolar junction transistor designed for general-purpose switching and amplification applications. It offers a collector-emitter voltage (Vce) of 10V and a collector current (Ic) rating of 3A, making it suitable for low-to-medium power circuits.

 

The transistor features a DC current gain (hFE) of minimum 140 at 3A collector current and 2V collector-emitter voltage, with a low saturation voltage of 400mV maximum at 60mA base current and 3A collector current. The transition frequency (fT) is 200MHz, enabling operation in moderate-frequency applications.

 

This device is housed in a surface-mount TO-243AA package with the supplier device package designation PCP. It is designed for surface-mount assembly and is suitable for automated manufacturing processes. The junction operating temperature is up to 150°C.

 

Typical applications include switching circuits, driver stages, and signal amplification in consumer electronics, industrial controls, and automotive systems.

2SD1620-TD-E Quick Information

Product Type: NPN Bipolar Transistor
Canonical Name: 2SD1620-TD-E NPN Bipolar Transistor
Subcategory: Single NPN

2SD1620-TD-E Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

2SD1620-TD-E Estimated Pricing

Qty Low High
1+ $0.89 $0.89
10+ $0.55 $0.55
100+ $0.36 $0.36
500+ $0.28 $0.28
1,000+ $0.23 $0.23

Estimated market price range - modelled values for guidance only, not live distributor offers.

2SD1620-TD-E Features

  • NPN bipolar transistor with 10V Vce and 3A Ic.
  • 200MHz transition frequency for moderate-speed switching.
  • Low Vce saturation voltage of 400mV max.
  • Surface-mount PCP package in TO-243AA case.
  • Maximum power dissipation of 500mW.

2SD1620-TD-E Applications

  • Used in general-purpose switching circuits.
  • Suitable for driver stages in power supplies.
  • Ideal for signal amplification in audio applications.
  • Can be used in relay or solenoid drivers.

2SD1620-TD-E FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage of the 2SD1620-TD-E?

The collector-emitter voltage (Vce) is 10V.

What package is the 2SD1620-TD-E available in?

It is available in a surface-mount TO-243AA package with supplier device package PCP.

What is the maximum junction operating temperature of the 2SD1620-TD-E?

The maximum junction temperature is 150°C.

Is the 2SD1620-TD-E RoHS compliant?

The part is listed as RoHS3 compliant, but this data is unverified.

What is the collector current rating of the 2SD1620-TD-E?

The collector current (Ic) is 3A.

What is the transition frequency of the 2SD1620-TD-E?

The transition frequency (fT) is 200MHz.

What is the DC current gain (hFE) of the 2SD1620-TD-E?

The minimum hFE is 140 at Ic=3A, Vce=2V.

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