| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The 2SD1618T-TD-E is an NPN bipolar junction transistor from On Semiconductor designed for general-purpose switching and amplification. It offers a maximum collector-to-emitter voltage of 15V and a continuous collector current of 700mA, with pulse capability up to 1.5A.
Key electrical characteristics include a DC current gain (hFE) of 200 minimum at 50mA and 2V, and a gain-bandwidth product of 250MHz. The collector-to-emitter saturation voltage is as low as 25mV at 5mA and 80mV at 100mA, enabling efficient low-voltage switching.
The transistor is housed in a PCP package (TO-243AA, SOT-89, SC-62) for surface mount assembly. It supports a junction temperature up to 150°C and is supplied in tape and reel packaging with 1000 pieces per reel. The device is lead-free (Pb Free) as per the datasheet.
| Qty | Low | High |
|---|---|---|
| 1,000+ | $0.24 | $0.24 |
| 1,281+ | $0.23 | $0.23 |
| 2,000+ | $0.22 | $0.22 |
| 3,000+ | $0.21 | $0.21 |
| 4,000+ | $0.11 | $0.11 |
| 5,000+ | $0.19 | $0.19 |
| 7,000+ | $0.19 | $0.19 |
| 10,000+ | $0.18 | $0.18 |
| 25,000+ | $0.16 | $0.16 |
| 50,000+ | $0.16 | $0.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-to-emitter voltage (VCEO) is 15V, and the maximum collector-to-base voltage (VCBO) is 20V.
The transistor is available in a PCP package, also known as TO-243AA, SC-62, or SOT-89 for surface mount.
The junction temperature can reach up to 150°C, and the storage temperature range is -55°C to +150°C.
The datasheet indicates the device is lead-free (Pb Free). RoHS compliance is unverified but listed as RoHS3 compliant with low confidence.
The DC current gain is minimum 200 at 50mA and 2V, and minimum 60 at 500mA and 2V. The T rank specifies hFE between 200 and 400.
The VCE(sat) is typically 10mV (min) and maximum 25mV at 5mA, and typically 30mV (min) and maximum 80mV at 100mA.
The typical gain-bandwidth product (fT) is 250 MHz at VCE=10V and IC=50mA.