| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6,983 pcs
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6983 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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| Voltage |
The 2SD1535 is a silicon NPN triple diffusion planar type darlington transistor designed for high power amplification. It offers a collector-emitter voltage (VCEO) of 400V and a continuous collector current (IC) of 7A, with a peak current capability of 14A. The device provides a high DC current gain (hFE) of minimum 500 at IC=2A, VCE=2V, and typical 200 at IC=6A, VCE=2V. Saturation voltages are low: VCE(sat) max 2V at IC=7A, IB=70mA, and VBE(sat) max 2.5V. The transistor has a transition frequency of 20 MHz and a wide safe operating area.
The 2SD1535 is housed in a TO-220-3 Full Pack (TO-220F-A1) package, which allows easy mounting to a heat sink with a single screw. The package is through-hole mount with a lead spacing of 2.54 mm. The device is RoHS3 compliant and has a junction temperature rating of 150°C, with storage temperature range of -55 to +150°C. Typical applications include high power audio amplification, switching power supplies, and motor control circuits.
400V maximum.
TO-220-3 Full Pack (TO-220F-A1).
Junction temperature up to 150°C, storage temperature -55 to +150°C.
Yes, RoHS3 compliant.
Minimum 500 at IC=2A, VCE=2V; typical 200 at IC=6A, VCE=2V.
7A continuous, 14A peak.
VCE(sat) max 2V at IC=7A, IB=70mA; VBE(sat) max 2.5V.