2SD1535 NPN Darlington transistor for high power amplification. Features 400V collector-emitter voltage, 7A collector current, and high DC current gain.
Mfr Part #:

2SD1535

Available from 1 distributors
Mfr Name: Panasonic Electronic Components
Panasonic Electronic Components
NPN Darlington transistor for high power amplification. Features 400V collector-emitter voltage, 7A collector current, and high DC current gain.
Total Stock: 6,983 pcs

2SD1535 Available from 1 distributor

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2SD1535 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current (IB) (Maximum)
Base-Emitter Saturation Voltage (VBE(sat)) (Maximum @ IC=7A, IB=70mA)
Collector Output Capacitance (Cob) (Typical @ VCB=10V, f=1MHz)
Collector-Base Cutoff Current (ICBO) (Maximum @ VCB=500V)
Collector-Base Voltage (Vcbo) (Maximum)
Collector-Emitter Cutoff Current (ICEO) (Maximum @ VCE=400V)
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
DC Current Gain (hFE) (Typical @ IC=6 A, VCE=2 V)
EIAJ Package Code
Emitter-Base Cutoff Current (IEBO) (Maximum @ VEB=12V)
Emitter-Base Voltage (Vebo) (Maximum)
Fall Time (tf) (Typical @ IC=7A, IB1=70mA, IB2=-70mA, VCC=300V)
Frequency
Lead Spacing
Mounting Type
Operating Temperature
Peak Collector Current (Icp) - Maximum
Power
Power Dissipation (Maximum @ TC=25 °C)
Storage Temperature
Storage Time (tstg) (Typical @ IC=7A, IB1=70mA, IB2=-70mA, VCC=300V)
Supplier Device Package
Transistor Type
Turn-on Time (ton) (Typical @ IC=7A, IB1=70mA, IB2=-70mA, VCC=300V)
Vce Saturation (Max) @ Ib, Ic
Voltage

2SD1535 Description

Short technical summary and product information.

The 2SD1535 is a silicon NPN triple diffusion planar type darlington transistor designed for high power amplification. It offers a collector-emitter voltage (VCEO) of 400V and a continuous collector current (IC) of 7A, with a peak current capability of 14A. The device provides a high DC current gain (hFE) of minimum 500 at IC=2A, VCE=2V, and typical 200 at IC=6A, VCE=2V. Saturation voltages are low: VCE(sat) max 2V at IC=7A, IB=70mA, and VBE(sat) max 2.5V. The transistor has a transition frequency of 20 MHz and a wide safe operating area.

 

The 2SD1535 is housed in a TO-220-3 Full Pack (TO-220F-A1) package, which allows easy mounting to a heat sink with a single screw. The package is through-hole mount with a lead spacing of 2.54 mm. The device is RoHS3 compliant and has a junction temperature rating of 150°C, with storage temperature range of -55 to +150°C. Typical applications include high power audio amplification, switching power supplies, and motor control circuits.

2SD1535 Quick Information

Subcategory: Single

2SD1535 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)
REACH Status: REACH Unaffected

2SD1535 Features

  • High voltage NPN Darlington transistor.
  • 400V collector-emitter breakdown voltage.
  • 7A continuous collector current.
  • High DC current gain of 500.
  • Full-pack TO-220F-A1 package.

2SD1535 Applications

  • High power audio amplification.
  • Switching power supply circuits.
  • Motor control applications.
  • General purpose power amplification.

2SD1535 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the collector-emitter voltage rating?

400V maximum.

What is the package type?

TO-220-3 Full Pack (TO-220F-A1).

What is the operating temperature range?

Junction temperature up to 150°C, storage temperature -55 to +150°C.

Is the 2SD1535 RoHS compliant?

Yes, RoHS3 compliant.

What is the DC current gain?

Minimum 500 at IC=2A, VCE=2V; typical 200 at IC=6A, VCE=2V.

What is the maximum collector current?

7A continuous, 14A peak.

What is the saturation voltage?

VCE(sat) max 2V at IC=7A, IB=70mA; VBE(sat) max 2.5V.

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