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5 pcs
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5 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SD1497 from Hitachi is a silicon NPN power transistor engineered for demanding applications such as TV horizontal deflection output. This component boasts a high Collector-Emitter Voltage rating of 600V and a high Collector-Base Voltage of 1500V, ensuring robust performance under stress.
With a continuous Collector Current capability of 6A and a surge current rating of 16A, the 2SD1497 can handle significant current loads. Its power dissipation is rated at 50W at a case temperature of 25℃. The transistor features a Collector-Emitter Saturation Voltage of 5.0V and a Base-Emitter Saturation Voltage of 1.5V under specific test conditions, indicating efficient operation.
Designed for high switching speeds, the 2SD1497 has a typical fall time of 2.0 μs. Its operating junction temperature range is up to 150℃, with storage temperatures from -45℃ to 150℃. The transistor's high breakdown voltage and switching characteristics make it suitable for power electronics designs requiring reliable performance.
This NPN power transistor is part of the broader discrete semiconductor products category, specifically within transistors. Its application in TV horizontal deflection highlights its suitability for high-voltage, high-speed switching tasks.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the 2SD1497 is 600V.
The continuous collector current (IC) for the 2SD1497 is 6A.
The power dissipation (PC) of the 2SD1497 is 50W at a case temperature of 25°C.
The junction temperature (TJ) for the 2SD1497 ranges up to 150°C.
The storage temperature range (Tstg) for the 2SD1497 is -45°C to 150°C.
The typical fall time (tf) for the 2SD1497 is 2.0 μs.
