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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba 2SD1427 is a silicon power transistor belonging to the Bipolar Junction Transistor (BJT) family. It is manufactured by Toshiba and is categorized under single, pre-biased transistors.
Key electrical specifications include a maximum collector current of 5A and a collector-emitter voltage of 600V. The transistor has 3 terminals, facilitating its integration into circuit designs. It is noted as being RoHS3 compliant, indicating adherence to environmental standards.
This component is suitable for applications requiring power switching or amplification within its specified voltage and current limits. Its construction as a silicon diffused power transistor suggests robustness for demanding electronic circuits. Further details on operating temperature, power dissipation, and specific application suitability would typically be found in the manufacturer's datasheet.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the 2SD1427 transistor is 5A.
The collector-emitter voltage rating for the 2SD1427 transistor is 600V.
The 2SD1427 transistor has 3 terminals.
The 2SD1427 transistor is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the 2SD1427 transistor is 1 Unlimited.
The REACH status for the 2SD1427 transistor is REACH Unaffected.