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15 pcs
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15 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba 2SD1409 is a high-voltage NPN power transistor designed for various electronic applications. It offers a collector-emitter breakdown voltage of 150V and can handle a continuous collector current of up to 10A, with a maximum power dissipation of 100W. This transistor is housed in a TO-220 package, making it suitable for through-hole mounting.
Key electrical characteristics include a minimum DC current gain (hFE) of 1000 at 1.5V and 500mA, and a Vce saturation voltage of 1.5V maximum under the same conditions. The input capacitance is rated at 150pF. These specifications make the 2SD1409 a robust component for power switching and amplification circuits.
Designed for reliability, the 2SD1409 is suitable for applications requiring significant power handling and voltage capability. Its through-hole mounting facilitates integration into traditional PCB designs.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage is 150V.
The maximum continuous collector current is 10A.
The maximum power dissipation is 100W.
The package type is TO-220-3.
The 2SD1409 is mounted using the through-hole method.