| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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9 pcs
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9 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SD1277 from Panasonic Electronic Components is a silicon NPN triple diffusion planar type Darlington transistor. It is engineered for medium-speed power switching applications and is complementary to the 2SB0951/2SB0951A series.
Key electrical characteristics include a high forward current transfer ratio (hFE) ranging from 1000 to 10000 at 4A and 500 at 8A. The collector-emitter voltage (VCEO) is rated at 80V for the 2SD1277A variant and 60V for the 2SD1277. It can handle a continuous collector current (IC) of up to 8A and a peak collector current (ICP) of 12A. The collector-emitter saturation voltage (VCE(sat)) is a maximum of 1.5V at 4A, and the base-emitter saturation voltage (VBE(sat)) is a maximum of 2.0V under the same conditions.
This transistor features a high-speed switching capability with a typical turn-on time of 0.5µs, storage time of 4.0µs, and fall time of 1.0µs. The junction temperature is rated up to 150°C, and it has a collector power dissipation of 45W at 25°C case temperature.
The 2SD1277 comes in a full-pack TO-220F-A1 package, designed for easy installation onto a heat sink using a single screw. This packaging facilitates efficient thermal management in power applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-base voltage of the 2SD1277 is 80V.
The package type of the 2SD1277 is TO-220F-A1.
The maximum collector current is 8A.
The maximum junction temperature is 150°C.
Yes, it is RoHS3 compliant.