SL3S1206FUD2/HAA-VB2
NXP Semiconductors
The NXP Semiconductors SL3S1206FUD2/HAA-VB2 is a Chassis Mount Resistor. It is RoHS3 Compliant and REACH Unaffected.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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626 pcs
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626 pcs | On Request | 1 | On Request | On Request | 02+ | On Request | On Request | |
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300 pcs
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300 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The 2SD1266-P is an NPN bipolar transistor manufactured by Panasonic Electronic Components. It is designed for general-purpose applications requiring a robust power transistor.
Key electrical characteristics include a maximum collector-emitter voltage (Vce) of 60V and a maximum continuous collector current (Ic) of 3A. The device offers a collector dissipation (Pc) of 35W, indicating its capability to handle moderate power levels. The DC current gain (hfe) ranges from 70 to 320, with specific classifications available for different variants like -O, -P, and -Q.
This transistor operates within a junction temperature range of -55 to +150°C. It is housed in a TO-220F package, which is suitable for through-hole mounting and provides adequate heat dissipation for its power rating.
The 2SD1266-P has a complementary PNP transistor, the 2SB941. It can be replaced by a wide range of other transistors, including the 2SC1826, 2SC1985, and various BD, D44, and TIP series devices.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (Vce) for the 2SD1266-P is 60V.
The continuous collector current (Ic) rating for the 2SD1266-P is 3A.
The collector dissipation (Pc) for the 2SD1266-P is 35W.
The 2SD1266-P comes in a TO-220F package.
The operating junction temperature range for the 2SD1266-P is -55 to +150°C.
The DC current gain (hfe) for the 2SD1266-P variant is between 120 and 250.
